Capacitancia personalizada de 10 pF-1000 pF, paso de tope y geometría de matriz disponibles
Tipo de golpe:
Pilar de cobre con tapa de soldadura SnAg
Lanzamiento de golpe:
80 µm (personalizado disponible)
Nivel de sensibilidad a la humedad:
MSL 1 (J-STD-020)
RoHS:
Cumple (UE 2015/863)
Resaltar:
Wafer-Level BGA MOS Capacitor 100 pF
,
30V Micro-Bump Ready MOS Capacitor
,
Flip-Chip MOS Capacitor for RF Assembly
Descripción de producto
HFC101S30V100 Wafer-Level BGA MOS Capacitor — 100 pF 30V Flip-Chip Ready In short: The HFC101S30V100 is a 100 pF, 30 V single-layer MOS capacitor built on high-resistivity float-zone silicon with a thermally grown SiO2 dielectric. It is supplied with wafer-level micro-bump (BGA) termination for flip-chip, bondwire-free assembly, and its amorphous SiO2 dielectric architecture does not exhibit dipole fatigue. It is used for DC blocking, RF bypass and coupling in dense RF and
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