Aangepaste capaciteit 10 pF-1000 pF, bump pitch en matrijsgeometrie beschikbaar
Bumptype:
Koperen zuil met SnAg-soldeerkap
Bump-pitch:
80 µm (op maat leverbaar)
Vochtgevoeligheid:
MSL 1 (J-STD-020)
RoHS:
Conform (EU 2015/863)
Markeren:
Wafer-Level BGA MOS Capacitor 100 pF
,
30V Micro-Bump Ready MOS Capacitor
,
Flip-Chip MOS Capacitor for RF Assembly
Productomschrijving
HFC101S30V100 Wafer-Level BGA MOS Capacitor — 100 pF 30V Flip-Chip Ready In short: The HFC101S30V100 is a 100 pF, 30 V single-layer MOS capacitor built on high-resistivity float-zone silicon with a thermally grown SiO2 dielectric. It is supplied with wafer-level micro-bump (BGA) termination for flip-chip, bondwire-free assembly, and its amorphous SiO2 dielectric architecture does not exhibit dipole fatigue. It is used for DC blocking, RF bypass and coupling in dense RF and