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Wafer-Level BGA MOS Capacitor 100 pF 30V Micro-Bump Ready Flip-Chip Chip for Bondwire-Free RF Assembly

Wafer-Level BGA MOS Capacitor 100 pF 30V Micro-Bump Ready Flip-Chip Chip for Bondwire-Free RF Assembly

Merknaam: Hoan
Modelnummer: HFC101S30V100
MOQ: 10 stuks
Betalingsvoorwaarden: L/C, D/A, D/P, T/T
Gedetailleerde informatie
Plaats van herkomst:
Shaanxi, China
Certificering:
ISO 9001:2015, RoHS
Chipgrootte:
0,50 x 0,50 x 0,15 mm
Bedrijfstemperatuur:
-55°C tot +125°C
Maatwerk:
Aangepaste capaciteit 10 pF-1000 pF, bump pitch en matrijsgeometrie beschikbaar
Bumptype:
Koperen zuil met SnAg-soldeerkap
Bump-pitch:
80 µm (op maat leverbaar)
Vochtgevoeligheid:
MSL 1 (J-STD-020)
RoHS:
Conform (EU 2015/863)
Markeren:

Wafer-Level BGA MOS Capacitor 100 pF

,

30V Micro-Bump Ready MOS Capacitor

,

Flip-Chip MOS Capacitor for RF Assembly

Productomschrijving
HFC101S30V100 Wafer-Level BGA MOS Capacitor — 100 pF 30V Flip-Chip Ready In short: The HFC101S30V100 is a 100 pF, 30 V single-layer MOS capacitor built on high-resistivity float-zone silicon with a thermally grown SiO2 dielectric. It is supplied with wafer-level micro-bump (BGA) termination for flip-chip, bondwire-free assembly, and its amorphous SiO2 dielectric architecture does not exhibit dipole fatigue. It is used for DC blocking, RF bypass and coupling in dense RF and