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MOS Kapasitörler
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Wafer-Level BGA MOS Capacitor 100 pF 30V Micro-Bump Ready Flip-Chip Chip for Bondwire-Free RF Assembly

Wafer-Level BGA MOS Capacitor 100 pF 30V Micro-Bump Ready Flip-Chip Chip for Bondwire-Free RF Assembly

Marka Adı: Hoan
Model Numarası: HFC101S30V100
Adedi: 10 adet
Ödeme Koşulları: L/C,D/A,D/P,T/T
Detay Bilgisi
Menşe yeri:
Şaanksi, Çin
Sertifika:
ISO 9001:2015, RoHS
Çip boyutu:
0,50x0,50x0,15 mm
Çalışma Sıcaklığı:
-55°C ila +125°C
Özelleştirme:
Özel kapasitans 10 pF-1000 pF, tümsek eğimi ve kalıp geometrisi mevcuttur
Çarpma Tipi:
SnAg lehim başlıklı bakır sütun
Çarpma Aralığı:
80 µm (özel olarak mevcuttur)
Nem Hassasiyet Seviyesi:
MSL 1 (J-STD-020)
RoHS:
Uyumlu (AB 2015/863)
Vurgulamak:

Wafer-Level BGA MOS Capacitor 100 pF

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30V Micro-Bump Ready MOS Capacitor

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Flip-Chip MOS Capacitor for RF Assembly

Ürün Tanımı
HFC101S30V100 Wafer-Level BGA MOS Capacitor — 100 pF 30V Flip-Chip Ready In short: The HFC101S30V100 is a 100 pF, 30 V single-layer MOS capacitor built on high-resistivity float-zone silicon with a thermally grown SiO2 dielectric. It is supplied with wafer-level micro-bump (BGA) termination for flip-chip, bondwire-free assembly, and its amorphous SiO2 dielectric architecture does not exhibit dipole fatigue. It is used for DC blocking, RF bypass and coupling in dense RF and