Özel kapasitans 10 pF-1000 pF, tümsek eğimi ve kalıp geometrisi mevcuttur
Çarpma Tipi:
SnAg lehim başlıklı bakır sütun
Çarpma Aralığı:
80 µm (özel olarak mevcuttur)
Nem Hassasiyet Seviyesi:
MSL 1 (J-STD-020)
RoHS:
Uyumlu (AB 2015/863)
Vurgulamak:
Wafer-Level BGA MOS Capacitor 100 pF
,
30V Micro-Bump Ready MOS Capacitor
,
Flip-Chip MOS Capacitor for RF Assembly
Ürün Tanımı
HFC101S30V100 Wafer-Level BGA MOS Capacitor — 100 pF 30V Flip-Chip Ready In short: The HFC101S30V100 is a 100 pF, 30 V single-layer MOS capacitor built on high-resistivity float-zone silicon with a thermally grown SiO2 dielectric. It is supplied with wafer-level micro-bump (BGA) termination for flip-chip, bondwire-free assembly, and its amorphous SiO2 dielectric architecture does not exhibit dipole fatigue. It is used for DC blocking, RF bypass and coupling in dense RF and