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Wafer-Level BGA MOS Capacitor 100 pF 30V Micro-Bump Ready Flip-Chip Chip for Bondwire-Free RF Assembly

Wafer-Level BGA MOS Capacitor 100 pF 30V Micro-Bump Ready Flip-Chip Chip for Bondwire-Free RF Assembly

Nama Merek: Hoan
Nomor Model: HFC101S30V100
MOQ: 10 buah
Ketentuan Pembayaran: L/C,D/A,D/P,T/T
Informasi Rinci
Tempat asal:
Shaanxi, Tiongkok
Sertifikasi:
ISO 9001:2015, RoHS
Ukuran chip:
0,50x0,50x0,15mm
Suhu Operasional:
-55°C hingga +125°C
Kustomisasi:
Kapasitansi khusus 10 pF-1000 pF, tersedia bump pitch dan die geometri
Tipe Benjolan:
Pilar tembaga dengan tutup solder SnAg
Lapangan Benjolan:
80 µm (tersedia khusus)
Tingkat Sensitivitas Kelembaban:
MSL 1 (J-STD-020)
RoHS:
Sesuai (UE 2015/863)
Menyoroti:

Wafer-Level BGA MOS Capacitor 100 pF

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30V Micro-Bump Ready MOS Capacitor

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Flip-Chip MOS Capacitor for RF Assembly

Deskripsi Produk
HFC101S30V100 Wafer-Level BGA MOS Capacitor — 100 pF 30V Flip-Chip Ready In short: The HFC101S30V100 is a 100 pF, 30 V single-layer MOS capacitor built on high-resistivity float-zone silicon with a thermally grown SiO2 dielectric. It is supplied with wafer-level micro-bump (BGA) termination for flip-chip, bondwire-free assembly, and its amorphous SiO2 dielectric architecture does not exhibit dipole fatigue. It is used for DC blocking, RF bypass and coupling in dense RF and