Capacità personalizzata 10 pF-1000 pF, bump pitch e geometria del die disponibili
Tipo di urto:
Pilastro in rame con cappuccio a saldare SnAg
Passo a sbalzo:
80 µm (disponibile su misura)
Livello di sensibilità all'umidità:
MSL1 (J-STD-020)
RoHS:
Conforme (UE 2015/863)
Evidenziare:
Wafer-Level BGA MOS Capacitor 100 pF
,
30V Micro-Bump Ready MOS Capacitor
,
Flip-Chip MOS Capacitor for RF Assembly
Descrizione di prodotto
HFC101S30V100 Wafer-Level BGA MOS Capacitor — 100 pF 30V Flip-Chip Ready In short: The HFC101S30V100 is a 100 pF, 30 V single-layer MOS capacitor built on high-resistivity float-zone silicon with a thermally grown SiO2 dielectric. It is supplied with wafer-level micro-bump (BGA) termination for flip-chip, bondwire-free assembly, and its amorphous SiO2 dielectric architecture does not exhibit dipole fatigue. It is used for DC blocking, RF bypass and coupling in dense RF and