Near-Zero Thermal Drift 1000 pF MOS Capacitor Wafer Probed KGD Single Layer Chip for High Temperature RF

HACC102S80V750KGD - Near-Zero Thermal Drift 1000 pF MOS Capacitor, 80V, Wafer Probed KGD Single Layer Chip

In short: The HACC102S80V750KGD is a wire-bondable single layer MOS capacitor rated 1000 pF ±10% at 80V DC with a near-zero thermal drift COG/NPO dielectric. Every die is 100% wafer probed and shipped as Known Good Die (KGD) for high assembly yield in high temperature RF, telecom and industrial circuits.

Key Performance Advantages

1. Near-Zero Thermal Drift & High Temperature Coefficients

• Class I COG/NPO dielectric with TCC of 0 ±30 ppm/°C across -55°C to +125°C, giving capacitance variation below ±0.3% over the full range
• Near-zero DC bias coefficient (<10 ppm/V), preventing detuning of matching networks under bias
• Zero aging, so capacitance stays stable over the whole product lifetime
• Suited to VCO tanks, bias tees and precision filters operating at elevated temperatures

2. 100% Wafer Probed & KGD (Known Good Die) Quality

• Every die is electrically probed at wafer level for capacitance, leakage and breakdown before dicing
• Supplied as Known Good Die for maximum yield in hybrid, MCM and chip-on-board builds
• Dielectric withstanding voltage >200V (>2.5× rated), 100% production tested
• Ultra-low leakage: <10 nA @ 25°C and <100 nA @ 125°C at full 80V DC bias
• Wire-bondable TaN/TiW/Ni/Au top metallization (≥2.5 µm Au) and TiW-Pt-Au backside for universal die attach
• Lot traceability and S-parameter data provided per production lot

Typical Specifications

Applications

• High temperature RF and microwave circuits
• Power amplifier bias network decoupling
• Precision filters and VCO tank circuits
• Telecom, industrial and instrumentation modules