Non-Magnetic MOS Capacitors 220 pF 30V Single Layer Chip for Broadband RF Bypassing Decoupling

Non-Magnetic MOS Capacitor 220 pF 30V Single Layer Chip for Broadband RF Bypassing & Decoupling

Summary: The HNM221S30V500 is a single-layer MOS (metal-oxide-semiconductor) chip capacitor rated 220 pF / 30 V DC, built on float-zone silicon with a thermal SiO&sub2; dielectric and an all-gold (TiW-Au) electrode system. It is non-ferromagnetic, temperature-stable, and offers intrinsic inductance below 0.05 nH, making it a single-layer MOS capacitor option for broadband RF bypassing and decoupling where magnetic interference, drift, and ESL matter. Capacitance value, chip geometry and metallization are customizable.

Key Specifications at a Glance

• Capacitance: 220 pF ±10% (tolerance options ±5%)
• Rated voltage: 30 V DC, dielectric strength >100 V DC
• Intrinsic chip ESL: <0.05 nH (single-layer vertical current path)
• Temperature coefficient: +35 ppm/°C, −55 °C to +125 °C
• Magnetic content: none (no nickel, iron or cobalt; gold-only electrodes)
• Moisture: MSL 1; ESD class 0 (HBM) — standard ESD-safe handling
• Chip size: 0.50 × 0.50 × 0.15 mm; wire bondable / eutectic die attach

Full Electrical Specifications (T = 25 °C unless noted)

Typical Applications

• MRI receive coil electronics and magnetometer front-ends needing a non-ferromagnetic component
• Broadband RF bypass and supply decoupling in amplifiers, mixers and transceivers
• DC blocking and bias injection in matching networks
• Satellite communication up/down converters, 5G base station front-ends
• Test and measurement instrumentation and RF laboratory equipment