Fast Discharge 2200 pF MOS Capacitor HACC222S100V1200 High Pulse Current Chip for Pulsed Power Drivers

HACC222S100V1200 Fast Discharge 2200 pF MOS Capacitor, High Pulse Current Chip for Pulsed Power Drivers

In short: the Hoan HACC222S100V1200 is a 2200 pF ±10%, 100 V DC single layer MOS capacitor supplied as a wire bondable die measuring 1.20 × 1.20 × 0.20 mm. It is designed for fast discharge duty, with peak pulse current above 40 A (10 µs, non-repetitive), discharge slew rate above 500 V/µs, ESR below 5 mOhm at 1 MHz and intrinsic ESL below 0.05 nH. The electrodes are symmetrical and non-polar, and Q stays above 20 at 10 GHz, so the same part can serve the pulse path and the RF bias network. Capacitance, voltage rating, die geometry and metallization are customizable.

What is this product?

This is a single layer MOS capacitor, also referred to as an SLC (single layer capacitor), wire bondable chip capacitor or MOS pulse capacitor. A 300 nm thermally grown SiO2 dielectric is formed on high-resistivity float-zone silicon (>1000 Ohm·cm), and thin-film electrodes are sputtered on both faces. Because the current path runs vertically through a 0.20 mm single-layer structure instead of through stacked internal electrodes, series inductance and series resistance stay low, which is the property that allows high peak discharge current with a fast edge.

Customization matrix

Quality, testing and compliance

• 100% of die are production tested for capacitance, dissipation factor, leakage current and dielectric withstanding voltage.
• Wire bond pull strength typically above 6 gf for 25 µm gold wire, verified per MIL-STD-883 Method 2011.7.
• ESD classification Class 0 per JESD22-A114 (HBM); ESD-safe packaging is used throughout.
• RoHS compliant to EU 2011/65/EU and (EU) 2015/863, REACH conformant, halogen-free per IEC 61249-2-21 on request.
• S-parameter files, pulse test data on request, lot traceability reports and material declarations are supplied with each production lot.
• Quality management system certified to ISO 9001:2015.

Typical applications

• Pulsed power driver and modulator energy transfer networks
• Laser diode and LED driver fast discharge paths
• GaN power amplifier drain modulation and bias decoupling
• Automotive radar, industrial sensor and instrumentation front ends
• High voltage DC-DC converter snubber and output filtering
• ATE pin electronics pulse shaping and high voltage decoupling
• Energy harvesting storage and discharge circuits