| Brand Name: | Hoan |
| Model Number: | HACC681S50V750 |
| MOQ: | 10 Pieces |
| Payment Terms: | T/T,L/C,D/A,D/P |
A single layer MOS capacitor is a planar metal-insulator-semiconductor capacitor built on a float-zone silicon substrate with a thermally grown SiO2 dielectric. Because the current path is a single vertical barrier with no internal electrodes and no vias, the device presents very low equivalent series inductance and a very small spread in capacitance over temperature and bias. This model is the larger-footprint variant, intended for protection and high-current decoupling roles.
The ability of a capacitor to hold a rail steady during a fast transient is set by the impedance it presents in the first few nanoseconds, and at those timescales impedance is dominated by ESL rather than by capacitance. The single layer construction collapses the current loop to a 0.20 mm vertical path, which is where the transient advantage comes from.
In a hot-plug inrush path or a bias network feeding a wide-bandgap power stage, the practical result is a lower clamp overshoot and a shorter settling tail than a same-value multilayer part, without stacking capacitors in series to survive the voltage excursion.
This model is a configurable platform rather than a fixed catalogue item, so the part can be re-specified for a particular rail, waveform or footprint. The same platform can also be re-assigned to another product family in your catalogue structure when your purchasing or catalogue classification requires it.
| Parameter | Standard | Available customization |
| Capacitance | 680 pF ±10% | 10 pF to 10,000 pF; ±5% or tighter tolerance |
| Rated voltage | 50 V DC | 6.3 V to 500 V DC; 1000 V with stacked dielectric |
| Chip dimensions | 0.75 × 0.75 × 0.20 mm | 0.25 × 0.25 mm to 5.0 × 5.0 mm; rectangular up to 4:1 aspect ratio |
| Dielectric | COG/NPO (Class I) | X7R (Class II), high-K, custom layer stacks |
| Upper metallization | TaN/TiW/Ni/Au, 2.5 µm Au | Up to 5.0 µm Au; aluminium option |
| Backside metallization | TiW-Pt-Au, 1.0 µm Au | Au only; AuSn or AuGe pre-deposition; silver-sinterable finish |
| Design architecture | Double-sided bordered | Single-sided bordered or borderless |
| Prototype lead time | 3–4 weeks | Expedited 1–2 weeks for standard values |
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