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Surge Tolerant MOS Capacitors 100V Single Layer 470 pF Capacitor Chip for Aerospace Power Systems

Surge Tolerant MOS Capacitors 100V Single Layer 470 pF Capacitor Chip for Aerospace Power Systems

Brand Name: Hoan
Model Number: HACC471S100V470
MOQ: 10 Pieces
Payment Terms: L/C,D/A,D/P,T/T
Detail Information
Place of Origin:
Shaanxi, China
Certification:
ISO 9001:2015, RoHS
Backside Metallization:
TiW-Pt-Au, >=1.0 Um Au (Pt Barrier)
Mounting Type:
Wire Bondable / AuSn Eutectic Or Conductive Epoxy Die Attach
Wire Bond Pull Strength:
>6 Gf (25 Um Au Wire)
Operating Temperature:
-55 C To +125 C
Storage Temperature:
-65 C To +150 C
Chip Dimensions:
0.50 X 0.50 X 0.15 Mm (20 X 20 X 6 Mil)
RoHS:
Compliant (EU 2015/863)
Customization Options:
Capacitance 10-2000 PF, Rated Voltage 20-200 V, Rectangular Die Up To 4:1, Bordered Electrode, Floating Backside, Custom Metallization
Highlight:

100V MOS Capacitors

,

470 pF Single Layer Capacitor

,

Aerospace Power System Capacitors

Product Description

Surge Tolerant MOS Capacitor HACC471S100V470 — 470 pF 100 V Single Layer Chip for Aerospace Power Systems

Product definition: The HACC471S100V470 is a surge-tolerant single-layer MOS capacitor with 470 pF ±10% capacitance and a 100 V DC rating. It is built on high-resistivity float-zone silicon (>1000 Ω·cm) with a 300 nm thermal SiO2 dielectric and a TiW-Au top / TiW-Pt-Au backside metallization system, in a 0.50 × 0.50 × 0.15 mm wire-bondable chip. It is designed for aerospace, satellite, and other high-reliability power circuits that must tolerate surge and overvoltage events and also use accurate RF simulation models.


At a Glance

  • Capacitance: 470 pF ±10%
  • Rated DC voltage: 100 V
  • Surge withstand: 200 V (2× rated, 10/1000 µs waveform)
  • Dielectric withstanding voltage: >250 V DC
  • Intrinsic chip ESL: <0.05 nH, ESR <0.1 Ω @ 1 GHz
  • Chip size: 0.50 × 0.50 × 0.15 mm, wire-bondable / eutectic die attach


Specifications (T = 25 °C unless noted)

Parameter Value Condition
Capacitance 470 pF ±10% 1 MHz, 1.0 Vrms
Rated DC Voltage 100 V Continuous
Surge Withstand Voltage 200 V (2× rated) 10/1000 µs waveform
Dielectric Withstanding Voltage >250 V DC 1 min, 25 °C
Dielectric Type Thermal SiO2, 300 nm, amorphous —
Substrate Float-zone Si, >1000 Ω·cm —
Intrinsic Chip ESL <0.05 nH De-embedded
Q Factor >2000 @ 1 MHz / >250 @ 1 GHz Typical
ESR @ 1 GHz <0.1 Ω Typical
Dissipation Factor ≤2.5% @ 1 MHz 1.0 Vrms
Insulation Resistance ≥104 MΩ At rated voltage
TCC 0 ±30 ppm/°C −55 °C to +125 °C
Leakage Current <10 nA @ 25 °C / <100 nA @ 125 °C At 100 V DC
ESD Tolerance Class 0 HBM / Class C2 CDM JESD22-A114 / C101
Moisture Sensitivity MSL 1 (J-STD-020, unlimited floor life) —
TID Hardness >100 krad(Si) ESCC 22900
Operating Temperature −55 °C to +125 °C —
Storage Temperature −65 °C to +150 °C —
Top Metallization TiW-Au, ≥2.5 µm Au —
Backside Metallization TiW-Pt-Au, ≥1.0 µm Au (Pt barrier) —
Mounting Type Wire bondable / AuSn eutectic or conductive epoxy die attach —
Wire Bond Pull Strength >6 gf (25 µm Au wire) —
Chip Dimensions 0.50 × 0.50 × 0.15 mm (20 × 20 × 6 mil) —
RoHS Compliant (EU 2015/863) —


Typical Applications

  • Aerospace avionics DC-link and bus decoupling
  • Satellite power conditioning and high-reliability supply bypass
  • Transient suppression in inductive-load switching circuits
  • High-reliability RF power amplifier bias networks
  • Energy-harvesting and pulse-discharge circuits in harsh environments


Surge Tolerant MOS Capacitors 100V Single Layer 470 pF Capacitor Chip for Aerospace Power Systems