Radiation-Hardened MOS Capacitors 50V Single Layer 100 pF Capacitor Chip for Space Satellite Systems

Radiation-Hardened MOS Capacitor HACC101S50V100 — 100 pF 50 V Single Layer Chip for Space and Satellite Systems

Product definition: The HACC101S50V100 is a radiation-hardened single-layer metal-oxide-semiconductor (MOS) capacitor with 100 pF ±10% capacitance and a 50 V DC rating. It is built on high-resistivity float-zone silicon (>1000 Ω·cm) with a 300 nm thermal SiO₂ dielectric and a TiW-Au top / TiW-Pt-Au backside metallization system, in a 0.50 × 0.50 × 0.15 mm wire-bondable chip. It is designed for space, satellite, and other radiation-exposed RF and analog circuits that also require low phase noise and accurate simulation models.

At a Glance

• Capacitance: 100 pF ±10% (±5% tolerance available)
• Rated DC voltage: 50 V
• Total ionizing dose: >100 krad(Si), ESCC 22900 test standard
• Intrinsic chip ESL: <0.05 nH
• Dielectric: thermal SiO₂, 300 nm, amorphous (no piezoelectric response)
• Chip size: 0.50 × 0.50 × 0.15 mm, wire-bondable / eutectic die attach

Specifications (T = 25 °C unless noted)

Typical Applications

• Satellite transponder, TT&C and payload DC-blocking / bypass networks
• Spacecraft oscillator (VCO) tank circuits and PLL loop filters
• Phased-array module bias decoupling in radiation environments
• Low-phase-noise synthesizer and reference chains
• Aerospace and high-reliability RF front-ends that require validated simulation models