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Moisture Resistant ESD Safe MOS Capacitors 470 pF 30V Single Layer Chip for Broadband RF Decoupling

Moisture Resistant ESD Safe MOS Capacitors 470 pF 30V Single Layer Chip for Broadband RF Decoupling

Brand Name: Hoan
Model Number: HMR471S30V500
MOQ: 10 Pieces
Payment Terms: T/T,L/C,D/A,D/P
Detail Information
Place of Origin:
Shaanxi, China
Certification:
ISO 9001:2015, RoHS
Top Metallization:
TiW (100nm) + Au (2.5µm Min)
Backside Metallization:
TiW-Pt-Au (Au 1.0µm Min)
Chip Dimensions:
0.50 × 0.50 × 0.15 Mm
Operating Temperature:
-55°C To +125°C
Storage Temperature:
-65°C To +150°C
RoHS:
Compliant (EU 2015/863)
Mounting Type:
Wire Bondable / Eutectic Die Attach
Customization:
Capacitance Value, Chip Geometry, Metallization And Packaging On Request
Highlight:

Moisture resistant ESD safe MOS capacitor

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470 pF 30V MOS capacitor

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Single layer chip broadband RF decoupling

Product Description

Moisture Resistant ESD Safe MOS Capacitor 470 pF 30V Single Layer Chip for Broadband RF Decoupling


Summary: The HMR471S30V500 is a single-layer MOS chip capacitor rated 470 pF / 30 V DC, fabricated on float-zone silicon with a dense thermal SiO&sub2; dielectric and a TiW-Pt-Au metallization system. It combines robust moisture performance (MSL 1, no bulk absorption) with electrostatic robustness and very low parasitic inductance, making it a single-layer MOS capacitor option for broadband RF decoupling in humid, outdoor and automotive environments. Capacitance value, chip geometry, and packaging are customizable.


Key Specifications at a Glance


  • Capacitance: 470 pF ±10% (tolerance options ±5%)
  • Rated voltage: 30 V DC, dielectric strength >100 V DC
  • Intrinsic chip ESL: <0.05 nH (single-layer vertical current path)
  • Temperature coefficient: +35 ppm/°C, −55 °C to +125 °C
  • Moisture: MSL 1; biased-humidity drift <0.1% over 1000 h
  • ESD: class 0 (HBM); silver-free metallization
  • Chip size: 0.50 × 0.50 × 0.15 mm; wire bondable / eutectic die attach


Full Electrical Specifications (T = 25 °C unless noted)


Parameter Value Test Condition
Capacitance 470 pF ±10% 1 MHz, 1.0 Vrms
Tolerance options ±10% (K), ±5% (J) —
Rated DC voltage 30 V Continuous
Dielectric strength >100 V DC 1 min, 25 °C
Intrinsic chip ESL <0.05 nH De-embedded from S-parameters
Q factor @ 1 MHz >2000 Typical
ESR @ 1 GHz <0.1 Ω Typical
TCC +35 ppm/°C −55 °C to +125 °C
Moisture sensitivity level MSL 1 J-STD-020, unlimited floor life
Biased humidity drift <0.1% 1000 h, 85 °C/85% RH, 30 V
Leakage current <10 nA (dry) / <20 nA (post-humidity) 30 V DC
Dielectric / substrate Thermal SiO&sub2; 300 nm / float-zone Si >1000 Ω·cm —
Operating / storage −55 to +125 °C / −65 to +150 °C —
RoHS Compliant EU 2015/863


Typical Applications


  • Outdoor remote radio units (RRU) exposed to condensation and thermal cycling
  • Automotive electronic control units (road salt, humidity, temperature swings)
  • Industrial IoT sensor nodes in unconditioned factory or agricultural environments
  • Marine and coastal communication electronics in salt-laden air
  • Medical wearable electronics subject to perspiration and body-worn humidity


Moisture Resistant ESD Safe MOS Capacitors 470 pF 30V Single Layer Chip for Broadband RF Decoupling