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Self-Heating Thermal Smoothing MOS Capacitor HACC222S50V1000 2200 pF 50V Single Layer Chip for RF Power Amplifiers

Name: Self-Heating Thermal Smoothing MOS Capacitor HACC222S50V1000 2200 pF 50V Single Layer Chip for RF Power Amplifiers
Brand: HongAn Microwave Co., Ltd.
SKU: HACC222S50V1000
Price: Negotiable USD
Availability: InStock

Brand Name:	Hoan
Model Number:	HACC222S50V1000
MOQ:	10 Pieces
Payment Terms:	L/C,D/A,D/P,T/T

Detail Information

Product Description

Detail Information

Place of Origin:

Shaanxi, China

Certification:

ISO 9001:2015, RoHS

Chip Dimensions:

1.00 × 1.00 × 0.15 Mm

Top Metallization:

TiW (100nm) + Au (4.0µm Min)

Backside Metallization:

TiW-Pt-Au, Au 2.0µm Min

Mounting Type:

Eutectic Die Attach / Wire Bondable

Operating Temperature:

-55°C To +125°C

Customization:

Custom Capacitance, Die Geometry, Metallization, And Packing

Highlight:

Self-Heating MOS Capacitor 2200 pF

Thermal Smoothing Capacitor 50V

Single Layer Chip Capacitor RF Power Amplifiers

Product Description

Self-Heating Thermal Redistribution MOS Capacitor — HACC222S50V1000

Definition: The HACC222S50V1000 is a 2200 pF ±10%, 50 V DC, single-layer MOS capacitor on a float-zone silicon substrate with a 300 nm thermal SiO₂ dielectric. A 1.00 × 1.00 × 0.15 mm chip, an ultra-thick 4.0 µm gold top electrode, and a fully metallized TiW-Pt-Au backside create a low-thermal-resistance path that redistributes and smooths self-generated heat in RF power amplifier modules.

Quick answer — at a glance

What it is: single-layer MOS capacitor, 2200 pF, 50 V, wire-bondable bare die.
Core function: self-heating thermal redistribution and thermal smoothing in high-power RF amplifiers.
Why it works: 300 nm SiO₂ sandwiched between two high-conductivity gold electrodes gives a low thermal-resistance path.
Thermal performance: junction-to-case thermal resistance <8 K/W; self-heating rise <5 °C at 40 W RF dissipation.
Stability: +35 ppm/°C from −55 °C to +125 °C; stable C–V across the thermal cycle.
Chip: 1.00 × 1.00 × 0.15 mm; intrinsic ESL <0.05 nH; Q >300 at 1 GHz.

Key features

Low thermal resistance: <8 K/W junction-to-case via fully metallized backside and thick gold electrode.
Thermal smoothing: <5 °C self-heating rise at 40 W RF dissipation; stable C–V over temperature.
High capacitance density: 2200 pF on a 1.00 mm chip for compact output matching and bias decoupling.
Intrinsic chip ESL <0.05 nH; Q >300 at 1 GHz.
TiW-Au top (≥4.0 µm) and TiW-Pt-Au backside for AuSn eutectic die attach.
RoHS compliant (EU 2015/863); ESD Class 0 (HBM) handling per JESD22-A114.

Specifications (T = 25 °C unless noted)

Parameter	Value	Test condition
Capacitance	2200 pF ±10% (±5% option)	1 MHz, 1.0 Vrms
Rated DC voltage	50 V	Continuous operation
Dielectric withstanding voltage	>125 V DC	1 minute ramp, 25 °C
Dielectric	Thermal SiO₂, 300 nm	Dry oxidation
Substrate	Float-zone Si, >1000 Ω·cm	—
Thermal resistance (junction-to-case)	<8 K/W	AuSn die attach
Self-heating temperature rise	<5 °C	40 W RF dissipation
Intrinsic chip ESL	<0.05 nH	De-embedded from S-parameter
Q factor @ 1 GHz	>300	Typical
TCC	+35 ppm/°C	−55 °C to +125 °C
Operating / storage temperature	−55 °C to +125 °C / −65 °C to +150 °C	—
Chip dimensions	1.00 × 1.00 × 0.15 mm	±0.025 mm

Typical applications

RF power amplifier output matching and drain-bias feeds.
DC blocking and bypass in high-power RF signal chains.
Cellular base station and remote radio unit (RRU) power stages.
Industrial RF heating, plasma excitation, and power supplies.
Wireless power and energy-harvesting circuits with high circulating current.
Test & measurement fixtures operating at sustained RF power.

Self-Heating Thermal Smoothing MOS Capacitor HACC222S50V1000 2200 pF 50V Single Layer Chip for RF Power Amplifiers

Tags:

Conical Inductor

Broadband Inductors

Air Core Inductor

Air Coil Inductor

MOS Capacitors