Custom RF Chip Capacitor Radiation Hardened Space Capacitor Flat Q Response Digital Wafer Map

Custom MOS Capacitor Rad Hard Radiation Hardened Space Flat Q Response Digital Wafer Map Automated Sorting

HACC101S10V500: Radiation-Hardened MOS Capacitor for Space with Digital Wafer Map & Flat-Q Response

Radiation-Hardened Formulations for Space

The HACC101S10V500 is specifically designed and qualified for space environments where total ionizing dose (TID) radiation degrades standard MOS structures. The radiation-hardened gate oxide — using nitrided SiO₂ or hardened Al₂O₃ formulations — minimizes radiation-induced interface trap generation and fixed oxide charge accumulation, the two primary mechanisms that cause threshold voltage shift and capacitance drift in irradiated MOS devices.

Qualification per ESCC 22900 demonstrates TID hardness >100 krad(Si) for the standard formulation and >300 krad(Si) with hardened oxide, with inductance-capacitance shift maintained below 5% at maximum TID. Post-irradiation annealing stability is verified: <1% additional shift after 168 hours at 100°C. The MOS capacitor architecture is inherently immune to single event effects (SEE) — no latch-up path exists (it is a two-terminal passive device), no SEU-sensitive node is present, and single event gate rupture is prevented by the dielectric thickness. This SEE immunity is a fundamental architectural advantage over active semiconductor devices and is verified by design, not by sample testing.

Engineered Flat-Q Frequency Response

Space-qualified RF subsystems require consistent impedance across frequency — and radiation must not degrade that consistency. The HACC101S10V500 delivers engineered flat-Q response with Q maintained within ±5% across the customer-specified band, and Q degradation verified <3% after 100 krad TID exposure. This ensures that your matching network, filter, or bias network performance remains stable from pre-launch verification through end-of-mission life.

Digital Wafer Map Delivery for Automated Sorting

Space-grade assembly requires full die-level traceability and automated sorting by electrical grade. The HACC101S10V500 delivers a complete digital wafer map in industry-standard XML KRF format, compatible with SECS-II fab automation and GDSII layout tools. Each die is binned by capacitance value, ESR, Q factor, and — uniquely for the RH variant — TID test grade from the wafer-level radiation qualification sample. The wafer map integrates directly with automated pick-and-place die sorters: die extraction by map bin code, full known-good-die (KGD) traceability per bin, and lot-level documentation suitable for ESA/NASA materials review board (MRB) submission.

Key Specifications

Applications

• LEO/MEO/GEO Satellite Bus Power Distribution — TID hard >100 krad, SEE immune, 15-year mission life qualified
• Deep Space Probe RF Subsystems — rad-hard oxide >300 krad, flat-Q radiation-stable across multi-decade missions
• Space-Based Phased Array Feed Networks — digital wafer map for automated sorting by TID bin, full traceability
• Scientific Instrument Charge Amplifiers — SEE immune, no latch-up, radiation-stable capacitance

Contact us with your TID requirement, mission profile, and wafer map format preference. ESA ESCC qualified radiation-hardened MOS capacitor prototypes with digital wafer map ship in 7–10 business days.