| Brand Name: | Hoan |
| Model Number: | HACC-CUSTOM-BM |
| MOQ: | 10 Pieces |
| Payment Terms: | L/C,D/A,D/P,T/T,Western Union |
The HACC-CUSTOM-BM offers customer-selectable backside metallization stacks optimized for eutectic die attach processes. Three gold-based eutectic alloy systems are available, selected based on your assembly thermal budget and reliability requirements:
All backside stacks include a TiW diffusion barrier (2000Å) to prevent gold-silicon interdiffusion, and a Ni barrier layer (500-2000Å) for AuSn soldering to prevent Sn consumption by the Au layer. Solder wettability exceeds 95% area coverage with X-ray voiding verified below 5% — ensuring uniform thermal and electrical conductivity across the entire die attach interface.
Standard MOS capacitors exhibit Q factor that varies significantly with frequency — typically peaking at a few hundred MHz then rolling off. For broadband RF applications (matching networks, bias tees, filter resonators), this Q(f) variation complicates design and limits usable bandwidth. The HACC-CUSTOM-BM offers engineered flat-Q response: Q maintained flat within ±5% across a customer-specified band from 100MHz to 10GHz, with Q roll-off controlled to <10% per decade beyond the plateau. This is achieved through tailored substrate doping (controlling series resistance frequency dependence) and electrode geometry optimization (controlling skin effect and current crowding). The result is a capacitor whose Q is predictable across your entire operating band — no Q peaks, no Q cliffs, and no surprises during prototype testing.
Dielectric absorption (DA) — the "memory effect" where a capacitor retains residual charge after discharge — is a critical parameter for sample-and-hold circuits, precision integrators, and charge-sensitive amplifiers where held charge must accurately represent the sampled voltage. The thermally grown SiO₂ dielectric in HACC-CUSTOM-BM achieves DA <0.05% at 1kHz and <0.02% at 1MHz — among the lowest of any capacitor technology. Combined with zero piezoelectric output (no mechanical-to-electrical coupling, unlike MLCCs with barium titanate dielectrics) and zero microphonic sensitivity, the HACC-CUSTOM-BM is ideal for precision analog applications where charge integrity is paramount.
| Parameter | Value |
|---|---|
| Backside Metallization | TiW-Au, TiW-Ni-Au, AuSn/AuGe/AuSi pre-form |
| Eutectic Temperatures | 280°C AuSn, 356°C AuGe, 363°C AuSi |
| Die Shear Strength | >2.5 kg/mm² AuSn on Au pad |
| Flat-Q Band | ±5% flatness, 100MHz–10GHz typical |
| Q Factor | ≥100 at 1GHz, custom Q(f) profile |
| Dielectric Absorption | <0.05% at 1kHz, <0.02% at 1MHz |
| Capacitance | 5pF–10,000pF |
| Dielectric Type | SiO₂, SiN, Al₂O₃, 50–5000Å |
| Operating Temperature | -55°C to +125°C |
| TCC | <30 ppm/°C (NPO/COG) |
Contact us with your eutectic alloy preference, target Q profile, and dielectric absorption requirements. Custom backside metallization MOS capacitor prototypes ship in 5–7 business days.