rincian produk

Rumah Produk

Self-Heating Thermal Smoothing MOS Capacitor HACC222S50V1000 2200 pF 50V Single Layer Chip for RF Power Amplifiers

Name: Self-Heating Thermal Smoothing MOS Capacitor HACC222S50V1000 2200 pF 50V Single Layer Chip for RF Power Amplifiers
Brand: HongAn Microwave Co., Ltd.
SKU: HACC222S50V1000
Price: Bisa dinegosiasikan USD
Availability: InStock

Nama Merek:	Hoan
Nomor Model:	HACC222S50V1000
MOQ:	10 buah
Ketentuan Pembayaran:	L/C,D/A,D/P,T/T

Informasi Rinci

Deskripsi Produk

Informasi Rinci

Tempat asal:

Shaanxi, Tiongkok

Sertifikasi:

ISO 9001:2015, RoHS

Dimensi Keping:

1,00 × 1,00 × 0,15mm

Metalisasi Teratas:

TiW (100nm) + Au (4,0µm mnt)

Metalisasi Bagian Belakang:

TiW-Pt-Au, Au 2,0µm mnt

Tipe Pemasangan:

Eutektik Die Attach / Kawat Dapat Diikat

Suhu Operasional:

-55°C hingga +125°C

Kustomisasi:

Kapasitansi khusus, geometri cetakan, metalisasi, dan pengepakan

Menyoroti:

Self-Heating MOS Capacitor 2200 pF

Thermal Smoothing Capacitor 50V

Single Layer Chip Capacitor RF Power Amplifiers

Deskripsi Produk

Self-Heating Thermal Redistribution MOS Capacitor — HACC222S50V1000 Definition: The HACC222S50V1000 is a 2200 pF ±10%, 50 V DC, single-layer MOS capacitor on a float-zone silicon substrate with a 300 nm thermal SiO2 dielectric. A 1.00 × 1.00 × 0.15 mm chip, an ultra-thick 4.0 µm gold top electrode, and a fully metallized TiW-Pt-Au backside create a low-thermal-resistance path that redistributes and smooths self-generated heat in RF power amplifier modules. Quick answer — at a

Tag:

Induktor Kerucut

Induktor Broadband

Induktor inti udara

induktor kumparan udara

Kondensator MOS