Rapid Prototyping MOS Capacitors Flexible Customization 10 pF Capacitor Eco Friendly Supply Chain Compliant Chip

HACC100S10V101 10pF 100V MOS Capacitor Flexible Customization Rapid Prototyping Eco-Friendly Supply Chain Compliant Chip

Flexible Customization and Rapid Prototyping: Accelerating RF Module Development with Configurable Capacitor Solutions

RF module development follows a predictable rhythm: concept, simulation, prototype, test, iterate. Every day spent waiting for a custom passive component is a day your design stays on the bench instead of in front of your customer. The HACC100S10V101 — a 10pF ±10%, 100V Single-Sided Bordered Single Layer Ceramic Capacitor (SLC) — is supported by a responsive prototyping and customization infrastructure designed to compress your development cycle from months to weeks.

Configuration Options: One Platform, Multiple Variants

The HACC100S10V101 serves as a foundational design within a broader configurable platform. Rather than treating each capacitance value as a separate part number requiring independent qualification, this platform approach allows you to tune key parameters while maintaining the same physical footprint, metallization system, and assembly process:

This configurability is enabled by the single-layer MIM (Metal-Insulator-Metal) fabrication process on high-resistivity silicon substrate. Unlike MLCCs where changing capacitance requires changing the entire multi-layer electrode stack design, the HACC platform adjusts capacitance solely through electrode area on the photolithography mask — a design change that takes hours, not weeks, to implement at the wafer level.

Rapid Prototyping: From Specification to Evaluation Samples in 3-4 Weeks

Our rapid prototyping workflow is designed for speed without sacrificing quality or traceability:

1. Week 1 — Specification Review & Mask Programming: Upon receiving your target capacitance, tolerance, and dielectric requirements, our applications team confirms feasibility within 2 business days. The photolithography mask is then programmed — for standard footprints, this is a digital mask design update with zero tooling cost.
2. Week 2 — Wafer Fabrication: High-resistivity float-zone silicon wafers undergo dry thermal oxidation (SiO₂ dielectric), TiW/Au or Pt/TiW/Au sputtering (depending on electrode side), photolithography, lift-off patterning, and wafer-level DC probe testing (100% capacitance, leakage, and breakdown voltage).
3. Week 3 — Dicing, Inspection & Packaging: Wafers are diced, visually inspected at 50* magnification, and packaged in conductive waffle packs or gel-paks. Lot-specific test data is compiled.
4. Week 3-4 — Shipment: Evaluation samples (typically 25-50 dice in waffle pack) ship with full Certificate of Conformance and available characterization data (S-parameters, C-V, TCC).

For standard catalog values (including the 10pF HACC100S10V101), evaluation samples ship from stock within 1-2 weeks. Custom values follow the 3-4 week prototyping cycle.

Eco-Friendly Manufacturing and Supply Chain Compliance

Modern electronics supply chains must satisfy multiple overlapping regulatory frameworks, and passive components are no exception. The HACC100S10V101 is manufactured with full compliance documentation to support your product's regulatory submissions:

• EU RoHS Directive 2011/65/EU (including 2015/863 amendment): The silicon substrate, SiO₂ dielectric, TiW barrier, Pt barrier, and Au electrodes are intrinsically free of all restricted substances (lead, mercury, cadmium, hexavalent chromium, PBB, PBDE, and all four phthalates — DEHP, BBP, DBP, DIBP). No exemptions are required.
• EU REACH Regulation (EC) 1907/2006: Full SVHC (Substances of Very High Concern) declaration available per production lot. The materials system — Si, SiO₂, TiW, Pt, Au — contains none of the Candidate List substances at reportable concentrations.
• Halogen-Free per IEC 61249-2-21: Chlorine content <900ppm, bromine content <900ppm, total halogens <1500ppm. The sputtered thin-film metallization and ceramic substrate are inherently halogen-free; no brominated flame retardants or chlorinated solvents are used in fabrication.
• Conflict Minerals (Dodd-Frank Section 1502 / EU Regulation 2017/821): Gold used in electrode sputtering is sourced from LBMA-certified refiners. Full CMRT (Conflict Minerals Reporting Template) available upon request.
• ISO 9001:2015: Fabrication facility maintains current ISO 9001:2015 certification with annual surveillance audits. Lot traceability from wafer start through final visual inspection is maintained in the production database.

Compliance documentation is not an afterthought — it is integrated into the lot traveller system. Every production lot ships with a compliance certificate summarizing RoHS status, REACH SVHC status, halogen content, and conflict minerals sourcing. For customers undergoing ISO 14001 or customer-specific quality audits, this documentation package eliminates the need for independent material testing.

Reliable Single-Sided Margin Design for High-Volume Assembly

The HACC100S10V101 features a Single-Sided Bordered (Margin) design — a clean, un-metallized ceramic border surrounding the top gold electrode. This simple geometric feature delivers three practical manufacturing benefits:

• Zero epoxy shorts: During conductive silver epoxy (H20E) die attach, the ceramic margin physically blocks excess epoxy from climbing the sidewall to the top electrode. This is an integral geometric feature, not a coating — it cannot be scratched, dissolved, or degraded by thermal cycling.
• Wire bond alignment reference: The gold-to-ceramic boundary provides a sharp optical contrast for automated wire bonder vision systems. The bonding wedge or ball capillary targets a position ≥25μm inside this boundary, ensuring consistent bond placement without manual alignment.
• Bottom ground optimization: Unlike double-sided bordered chips, the HACC100S10V101 keeps the bottom electrode fully metallized (borderless), maximizing the ground contact area. This design choice prioritizes the lowest possible RF ground impedance — a measurable performance advantage in high-frequency bypass applications.

Key Electrical Specifications

Application Areas

• Rapid RF Module Prototyping: Standard 10pF value ships from stock in 1-2 weeks; custom capacitances (±5% tolerance, alternative dielectrics, rectangular form factors) in 3-4 weeks. Compatible with all standard die-attach and wire-bonding platforms including Datacon, Finetech, and Tresky automated systems.
• 5G FR2, 6G Research & mmWave Subsystems: Ultra-low ESR and single-layer coaxial architecture support clean DC blocking through 40GHz+ for emerging 6G sub-THz prototype platforms. Custom capacitance values from 5pF-500pF available on the same 0.50mm footprint.
• GaN/GaAs/InP Power Amplifier & LNA Bias Networks: 100V rating with >250V DWV provides robust headroom for 28-50V GaN drain bias decoupling. 10pF value with <0.1Ω ESR minimizes insertion loss in GaAs pHEMT and InP HBT LNA input DC blocks.
• Medical Electronics: Biocompatible materials system (Au, Pt, Si, SiO₂, TiW). ISO 9001 lot traceability supports FDA 21 CFR Part 820 design history file requirements. Halogen-free certification meets IEC 60601-1-9 requirements for medical electrical equipment.
• Automotive-Grade Modules (ADAS, Radar, V2X): -55°C to +125°C operating range with AEC-Q200 compatible qualification data. Conflict mineral reporting and full REACH/SVHC declarations support OEM supply chain transparency requirements.
• Optical Transceivers (100G/400G/800G): 10pF DC block with <0.1Ω ESR for 25-112Gbaud PAM4 signaling. 0.15mm height fits within hermetic TOSA/ROSA module lids. Per-lot S-parameter data supports compliance matrix documentation.
• Industrial IoT & Edge Computing RF: Full regulatory compliance (RoHS, REACH, halogen-free) supports CE/UKCA marking and global market access. Waffle pack and tape-and-reel packaging options for both prototype and volume production.

Assembly Guidelines

• Die Attach: Conductive epoxy (H20E, 120°C/30min) or AuSn eutectic (300-320°C, N₂/H₂). The bottom Pt barrier ensures compatibility with all methods.
• Wire Bonding: 25µm Au thermosonic ball bonding (120-150°C stage, >3.0g pull). Bond ≥25µm from electrode edge.
• Die Placement Force: Keep pick-and-place collet force ≤50gf with compliant tip (silicone or ESD-safe elastomer). Hard metal collets risk micro-cracking the 0.15mm thin single-layer ceramic substrate. Verify placement accuracy within ±25μm using automated vision alignment.
• Storage: Waffle pack or gel-pak, 20-25°C, 40-60% RH, nitrogen cabinet. MSL 1 — unlimited floor life at ≤30°C/85%RH.

Note on MIL-STD-883 Compliance: Wire bond pull strength testing exceeds 3.0 grams per MIL-STD-883 Method 2011.7, verified per wafer lot on sample die from center and four corner positions. Full lot qualification data available upon request.

Contact us with your target specifications for a rapid feasibility assessment, lead time estimate, and quotation. Evaluation samples for standard values ship within 1-2 weeks.