Tipik 0,10 Ohm, maksimum 0,15 Ohm (gömülü olmayan)
Dahili ESL:
<0,05 nH
Kendi kendine rezonanslı frekans:
>Yalnızca 2 GHz çip, >1,0 mm Au kabloyla 800 MHz
TCC:
0 +/-30 ppm/C (-55 C ila +125 C)
DC Önyargı Katsayısı:
<10 ppm/V (0-25 V)
Yüzey:
Şamandıra bölgesi silikonu >1000 Ohm-cm
Dielektrik:
yaklaşık. 300 nm termal SiO2
Vurgulamak:
MOS Capacitors 150 pF 25V
,
Wire Bondable Single Layer Die
,
Low TCC MOS Capacitors
Ürün Tanımı
Photo: HACC151S25V550 single layer MOS capacitor die, 0.55 mm square, gold top pad and gold backside plane HACC151S25V550 150 pF MOS Capacitor, 25 V, Q Factor 3000 at 1 MHz, Wire Bondable Single Layer Die Single layer MOS (metal-oxide-semiconductor) capacitor on float-zone silicon for RF oscillator tank, matching and bias decoupling circuits 150 pF ±2% 25 V DC Q typ. 3000 @ 1 MHz TCC 0 ±30 ppm/°C 0.55 × 0.55 × 0.15 mm Wire bondable bare die What This Component Is The