>Solo chip de 2 GHz, >800 MHz con cable Au de 1,0 mm
TCC:
0 +/-30 ppm/C (-55 C a +125 C)
Coeficiente de polarización de CC:
<10 ppm/V (0-25 V)
sustrato:
Silicio de zona flotante >1000 Ohm-cm
Dieléctrico:
aprox. SiO2 térmico de 300 nm
Resaltar:
MOS Capacitors 150 pF 25V
,
Wire Bondable Single Layer Die
,
Low TCC MOS Capacitors
Descripción de producto
Photo: HACC151S25V550 single layer MOS capacitor die, 0.55 mm square, gold top pad and gold backside plane HACC151S25V550 150 pF MOS Capacitor, 25 V, Q Factor 3000 at 1 MHz, Wire Bondable Single Layer Die Single layer MOS (metal-oxide-semiconductor) capacitor on float-zone silicon for RF oscillator tank, matching and bias decoupling circuits 150 pF ±2% 25 V DC Q typ. 3000 @ 1 MHz TCC 0 ±30 ppm/°C 0.55 × 0.55 × 0.15 mm Wire bondable bare die What This Component Is The
english
français
Deutsch
Italiano
Русский
Español
português
Nederlandse
ελληνικά
日本語
한국
polski
فارسی
বাংলা
ไทย
tiếng Việt
العربية
हिन्दी
Türkçe
indonesia
