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HACC151S25V550 MOS Capacitors 150 pF 25V Q Factor 3000 Low TCC Wire Bondable Single Layer Die

HACC151S25V550 MOS Capacitors 150 pF 25V Q Factor 3000 Low TCC Wire Bondable Single Layer Die

Merknaam: Hoan
Modelnummer: HACC151S25V550
MOQ: 10 stuks
Betalingsvoorwaarden: T/T,L/C,D/A,D/P
Gedetailleerde informatie
Plaats van herkomst:
Shaanxi, China
Certificering:
ISO 9001:2015
ESR op 1 GHz:
Typisch 0,10 Ohm, maximaal 0,15 Ohm (de-embedded)
Intrinsieke ESL:
<0,05 nH
Zelfresonantiefrequentie:
Alleen >2 GHz-chip, >800 MHz met 1,0 mm Au-draad
TCC:
0 +/-30 ppm/C (-55 C tot +125 C)
DC-biascoëfficiënt:
<10 ppm/V (0-25 V)
Substraat:
Vlotterzone silicium >1000 Ohm-cm
Diëlektrisch:
ca. 300 nm thermisch SiO2
Markeren:

MOS Capacitors 150 pF 25V

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Wire Bondable Single Layer Die

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Low TCC MOS Capacitors

Productomschrijving
Photo: HACC151S25V550 single layer MOS capacitor die, 0.55 mm square, gold top pad and gold backside plane HACC151S25V550 150 pF MOS Capacitor, 25 V, Q Factor 3000 at 1 MHz, Wire Bondable Single Layer Die Single layer MOS (metal-oxide-semiconductor) capacitor on float-zone silicon for RF oscillator tank, matching and bias decoupling circuits 150 pF ±2% 25 V DC Q typ. 3000 @ 1 MHz TCC 0 ±30 ppm/°C 0.55 × 0.55 × 0.15 mm Wire bondable bare die What This Component Is The