Optimized Dielectric Relaxation Time MOS Capacitor 470pF 50V Single Layer Chip For Pulse Circuits

HACC471S50V200 Optimized Dielectric Relaxation Time MOS Capacitor — 470pF 50V Single Layer Chip

Product overview: The HACC471S50V200 is a single-layer metal-oxide-semiconductor (MOS) capacitor with a nominal capacitance of 470pF ±10% and a 50V DC working voltage. It uses a 300nm thermal silicon dioxide (SiO₂) dielectric on a float-zone silicon substrate with a TiW-Au metallization stack. It is engineered around two properties: an optimized dielectric relaxation time and ultra-fast polarization relaxation, so that stored charge settles quickly after a fast pulse transition. This makes it suited to pulse and switching circuits where droop, settling time, and pulse-to-pulse repeatability matter.

What Is Dielectric Relaxation Time?

After a capacitor charges, the dielectric material needs a finite time to return to its equilibrium polarization state. That period is the dielectric relaxation time. If the dielectric relaxes slowly, residual charge from a previous pulse can affect the next pulse, producing amplitude droop or timing error in a pulse train. A capacitor with a short, well-controlled relaxation time and low dielectric absorption starts each pulse from a clean charge state, which improves repeatability in pulse-forming, sample-and-hold, and modulator circuits.

Key Specifications (T = 25°C unless noted)

Typical Applications

• Pulse-forming and pulse-shaping networks
• Fast sample-and-hold and peak-detector stages
• Radar and LIDAR pulse modulators
• Power-converter snubber and dV/dt clamping nodes
• High-speed analog acquisition front-ends
• Precision integrators and charge-transfer circuits