products details

Home Products

Microphonic Suppression MOS Capacitor HACC471S50V500 470 pF 50V Single Layer Chip for RF Power Amplifiers

Name: Microphonic Suppression MOS Capacitor HACC471S50V500 470 pF 50V Single Layer Chip for RF Power Amplifiers
Brand: HongAn Microwave Co., Ltd.
SKU: HACC471S50V500
Price: Negotiable USD
Availability: InStock

Brand Name:	Hoan
Model Number:	HACC471S50V500
MOQ:	10 Pieces
Payment Terms:	L/C,D/A,D/P,T/T

Detail Information

Product Description

Detail Information

Place of Origin:

Shaanxi, China

Certification:

ISO 9001:2015, RoHS

Q Factor @ 1GHz:

>300

Chip Dimensions:

0.50 × 0.50 × 0.15 Mm

Top Metallization:

TiW (100nm) + Au (2.5µm Min)

Backside Metallization:

TiW-Pt-Au, Au 1.0µm Min

Mounting Type:

Wire Bondable / Eutectic Die Attach

Operating Temperature:

-55°C To +125°C

Customization:

10pF-1000pF, Rectangular Die, Bordered Electrode, Floating Backside

Highlight:

MOS capacitor 470 pF 50V

single layer chip RF amplifier

HACC471S50V500 microphonic suppression capacitor

Product Description

Microphonic Phase Modulation Control MOS Capacitor — HACC471S50V500

Definition: The HACC471S50V500 is a 470 pF ±10%, 50 V DC, single-layer MOS capacitor built on a float-zone silicon substrate (>1000 Ω·cm) with a 300 nm thermally grown SiO₂ dielectric. It is designed for RF power amplifier bias networks, DC blocking, and impedance matching where vibration-induced phase modulation and microphonic noise must be controlled.

Quick answer — at a glance

What it is: single-layer MOS capacitor, 470 pF, 50 V, wire-bondable bare die.
Core function: controls microphonic phase modulation and suppresses microphonic modulation in RF PA signal chains.
Why it works: amorphous thermal SiO₂ dielectric has no piezoelectric coefficient and no ferroelectric domains.
Verified microphonic output: below measurement noise floor under 10 g, 20 Hz–2 kHz vibration (MIL-STD-202 Method 204).
Stability: <10 ppm/V DC-bias coefficient; +35 ppm/°C from −55 °C to +125 °C; no ageing.
Chip: 0.50 × 0.50 × 0.15 mm; intrinsic ESL <0.05 nH; Q >300 at 1 GHz.

Key features

Zero piezoelectric response — no vibration-to-phase-modulation conversion.
Intrinsic chip ESL <0.05 nH; SRF above 1 GHz for 470 pF (tunable via bond-wire length).
Q >2000 at 1 MHz and >300 at 1 GHz for low insertion loss.
TiW (100 nm) + Au (≥2.5 µm) top metallization for thermosonic gold wire bonding (>6 gf typical pull strength).
TiW-Pt-Au backside with platinum diffusion barrier for AuSn eutectic and silver-epoxy die attach.
RoHS compliant (EU 2015/863); ESD Class 0 (HBM) handling per JESD22-A114.

Specifications (T = 25 °C unless noted)

Parameter	Value	Test condition
Capacitance	470 pF ±10% (±5% option)	1 MHz, 1.0 Vrms
Rated DC voltage	50 V	Continuous operation
Dielectric withstanding voltage	>125 V DC	1 minute ramp, 25 °C
Dielectric	Thermal SiO₂, 300 nm	Dry oxidation
Substrate	Float-zone Si, >1000 Ω·cm	—
Intrinsic chip ESL	<0.05 nH	De-embedded from S-parameter
Q factor @ 1 GHz	>300	Typical
DC-bias coefficient	<10 ppm/V	0–50 V
TCC	+35 ppm/°C	−55 °C to +125 °C
Microphonic output	Below noise floor	10 g, 20 Hz–2 kHz sweep
Operating / storage temperature	−55 °C to +125 °C / −65 °C to +150 °C	—
Chip dimensions	0.50 × 0.50 × 0.15 mm	±0.025 mm

Typical applications

RF power amplifier bias tees and drain-feed DC blocking.
VCO / PLL tank and loop-filter networks sensitive to vibration.
LNA input matching and bypass in the presence of mechanical excitation.
Cellular base station and remote radio unit (RRU) front-ends.
Industrial RF heating, plasma excitation, and test & measurement instruments.
Automotive RF and wireless sensor modules under continuous vibration.

Microphonic Suppression MOS Capacitor HACC471S50V500 470 pF 50V Single Layer Chip for RF Power Amplifiers

Tags:

Conical Inductor

Broadband Inductors

Air Core Inductor

Air Coil Inductor

MOS Capacitors