10пФ-1000пФ, прямоугольная матрица, электрод с окантовкой, плавающая задняя сторона
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MOS capacitor 470 pF 50V
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single layer chip RF amplifier
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HACC471S50V500 microphonic suppression capacitor
Характер продукции
Microphonic Phase Modulation Control MOS Capacitor — HACC471S50V500 Definition: The HACC471S50V500 is a 470 pF ±10%, 50 V DC, single-layer MOS capacitor built on a float-zone silicon substrate (>1000 Ω·cm) with a 300 nm thermally grown SiO2 dielectric. It is designed for RF power amplifier bias networks, DC blocking, and impedance matching where vibration-induced phase modulation and microphonic noise must be controlled. Quick answer — at a glance What it is: single-layer MOS