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Deep Level Trap Passivated MOS Capacitor HACC102S30V470 470pF 30V Zero C-V Hysteresis SLC

Deep Level Trap Passivated MOS Capacitor HACC102S30V470 470pF 30V Zero C-V Hysteresis SLC

Merknaam: Hoan
Modelnummer: HACC102S30V470
MOQ: 10 stuks
Betalingsvoorwaarden: L/C, D/A, D/P, T/T
Gedetailleerde informatie
Plaats van herkomst:
Shaanxi, China
Certificering:
ISO 9001:2015, RoHS
Chipafmetingen:
0,50 x 0,50 x 0,15 mm
Topmetallisatie:
Au, 2,5 um min
Metallisatie aan de achterkant:
Au, 1,0 um min
Bedrijfstemperatuur:
-55°C tot +125°C
RoHS:
Voldoet aan EU 2015/863
ESD-klasse:
Klasse 0 (HBM)
Montagetype:
Met draad te verbinden/eutectische matrijsbevestiging
Markeren:

Deep Level Trap Passivated MOS Capacitor

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470pF 30V MOS Capacitor

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Zero C-V Hysteresis SLC Capacitor

Productomschrijving
Deep Level Trap Passivated MOS Capacitor HACC102S30V470 470pF 30V Summary: The HACC102S30V470 is a 470 pF ±10%, 30 V DC single-layer MOS capacitor with a deep-level trap passivated Si/SiO2 interface. It is intended for RF matching, filtering and precision analog circuits where interface trap density, C-V hysteresis and long-term charge trapping affect stability. Overview The HACC102S30V470 is built on a float-zone silicon substrate (above 1000 Ω·cm) with a 300 nm thermal SiO2