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Deep Level Trap Passivated MOS Capacitor HACC102S30V470 470pF 30V Zero C-V Hysteresis SLC

Deep Level Trap Passivated MOS Capacitor HACC102S30V470 470pF 30V Zero C-V Hysteresis SLC

Nama Merek: Hoan
Nomor Model: HACC102S30V470
MOQ: 10 buah
Ketentuan Pembayaran: L/C,D/A,D/P,T/T
Informasi Rinci
Tempat asal:
Shaanxi, Tiongkok
Sertifikasi:
ISO 9001:2015, RoHS
Dimensi Keping:
0,50x0,50x0,15mm
Metalisasi Teratas:
Au, 2,5 um mnt
Metalisasi Bagian Belakang:
Au, 1,0 um mnt
Suhu Operasional:
-55°C hingga +125°C
RoHS:
Sesuai dengan UE 2015/863
Kelas ESD:
Kelas 0 (HBM)
Tipe Pemasangan:
Kawat Berikat / Die Attach Eutectic
Menyoroti:

Deep Level Trap Passivated MOS Capacitor

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470pF 30V MOS Capacitor

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Zero C-V Hysteresis SLC Capacitor

Deskripsi Produk
Deep Level Trap Passivated MOS Capacitor HACC102S30V470 470pF 30V Summary: The HACC102S30V470 is a 470 pF ±10%, 30 V DC single-layer MOS capacitor with a deep-level trap passivated Si/SiO2 interface. It is intended for RF matching, filtering and precision analog circuits where interface trap density, C-V hysteresis and long-term charge trapping affect stability. Overview The HACC102S30V470 is built on a float-zone silicon substrate (above 1000 Ω·cm) with a 300 nm thermal SiO2