Capacitancia personalizada de 10 pF-1000 pF, perfil de interfaz de gradiente y geometría de troquel
Resaltar:
Gradient impedance matching MOS capacitor
,
220 pF 30V MOS capacitor
,
Ultra-wideband RF signal MOS capacitor
Descripción de producto
HGM221S30V220 Gradient Impedance Matching MOS Capacitor — 220 pF 30V Ultra-Wideband In short: The HGM221S30V220 is a 220 pF, 30 V single-layer MOS capacitor built on high-resistivity float-zone silicon with a thermally grown SiO2 dielectric. Its gradient impedance interface smooths the transition to the surrounding circuit so the capacitor keeps a consistent response over an ultra-wideband range, and it also holds sub-degree phase consistency between elements for array use.
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