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Gradient Impedance Matching MOS Capacitor 220 pF 30V Chip for Ultra-Wideband RF Signal Chains

Gradient Impedance Matching MOS Capacitor 220 pF 30V Chip for Ultra-Wideband RF Signal Chains

Merknaam: Hoan
Modelnummer: HGM221S30V220
MOQ: 10 stuks
Betalingsvoorwaarden: L/C, D/A, D/P, T/T
Gedetailleerde informatie
Plaats van herkomst:
Shaanxi, China
Certificering:
ISO 9001:2015, RoHS
Chipgrootte:
0,50 x 0,50 x 0,15 mm
Bedrijfstemperatuur:
-55°C tot +125°C
Vochtgevoeligheid:
MSL 1 (J-STD-020)
RoHS:
Conform (EU 2015/863)
Bruikbare bandbreedte:
DC tot 40 GHz (typisch)
Maatwerk:
Aangepaste capaciteit 10 pF-1000 pF, gradiëntinterfaceprofiel en matrijsgeometrie
Markeren:

Gradient impedance matching MOS capacitor

,

220 pF 30V MOS capacitor

,

Ultra-wideband RF signal MOS capacitor

Productomschrijving
HGM221S30V220 Gradient Impedance Matching MOS Capacitor — 220 pF 30V Ultra-Wideband In short: The HGM221S30V220 is a 220 pF, 30 V single-layer MOS capacitor built on high-resistivity float-zone silicon with a thermally grown SiO2 dielectric. Its gradient impedance interface smooths the transition to the surrounding circuit so the capacitor keeps a consistent response over an ultra-wideband range, and it also holds sub-degree phase consistency between elements for array use.