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MOS Kapasitörler
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Gradient Impedance Matching MOS Capacitor 220 pF 30V Chip for Ultra-Wideband RF Signal Chains

Gradient Impedance Matching MOS Capacitor 220 pF 30V Chip for Ultra-Wideband RF Signal Chains

Marka Adı: Hoan
Model Numarası: HGM221S30V220
Adedi: 10 adet
Ödeme Koşulları: L/C,D/A,D/P,T/T
Detay Bilgisi
Menşe yeri:
Şaanksi, Çin
Sertifika:
ISO 9001:2015, RoHS
Çip boyutu:
0,50x0,50x0,15 mm
Çalışma Sıcaklığı:
-55°C ila +125°C
Nem Hassasiyet Seviyesi:
MSL 1 (J-STD-020)
RoHS:
Uyumlu (AB 2015/863)
Kullanılabilir Bant Genişliği:
DC - 40 GHz (tipik)
Özelleştirme:
Özel kapasite 10 pF-1000 pF, gradyan arayüz profili ve kalıp geometrisi
Vurgulamak:

Gradient impedance matching MOS capacitor

,

220 pF 30V MOS capacitor

,

Ultra-wideband RF signal MOS capacitor

Ürün Tanımı
HGM221S30V220 Gradient Impedance Matching MOS Capacitor — 220 pF 30V Ultra-Wideband In short: The HGM221S30V220 is a 220 pF, 30 V single-layer MOS capacitor built on high-resistivity float-zone silicon with a thermally grown SiO2 dielectric. Its gradient impedance interface smooths the transition to the surrounding circuit so the capacitor keeps a consistent response over an ultra-wideband range, and it also holds sub-degree phase consistency between elements for array use.