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Gradient Impedance Matching MOS Capacitor 220 pF 30V Chip for Ultra-Wideband RF Signal Chains

Gradient Impedance Matching MOS Capacitor 220 pF 30V Chip for Ultra-Wideband RF Signal Chains

Nama Merek: Hoan
Nomor Model: HGM221S30V220
MOQ: 10 buah
Ketentuan Pembayaran: L/C,D/A,D/P,T/T
Informasi Rinci
Tempat asal:
Shaanxi, Tiongkok
Sertifikasi:
ISO 9001:2015, RoHS
Ukuran chip:
0,50x0,50x0,15mm
Suhu Operasional:
-55°C hingga +125°C
Tingkat Sensitivitas Kelembaban:
MSL 1 (J-STD-020)
RoHS:
Sesuai (UE 2015/863)
Bandwidth yang Dapat Digunakan:
DC hingga 40 GHz (khas)
Kustomisasi:
Kapasitansi khusus 10 pF-1000 pF, profil antarmuka gradien, dan geometri cetakan
Menyoroti:

Gradient impedance matching MOS capacitor

,

220 pF 30V MOS capacitor

,

Ultra-wideband RF signal MOS capacitor

Deskripsi Produk
HGM221S30V220 Gradient Impedance Matching MOS Capacitor — 220 pF 30V Ultra-Wideband In short: The HGM221S30V220 is a 220 pF, 30 V single-layer MOS capacitor built on high-resistivity float-zone silicon with a thermally grown SiO2 dielectric. Its gradient impedance interface smooths the transition to the surrounding circuit so the capacitor keeps a consistent response over an ultra-wideband range, and it also holds sub-degree phase consistency between elements for array use.