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Gradient Impedance Matching MOS Capacitor 220 pF 30V Chip for Ultra-Wideband RF Signal Chains

Gradient Impedance Matching MOS Capacitor 220 pF 30V Chip for Ultra-Wideband RF Signal Chains

브랜드 이름: Hoan
모델 번호: HGM221S30V220
MOQ: 10개
지불 조건: L/C,D/A,D/P,T/T
상세 정보
원래 장소:
중국 산시성
인증:
ISO 9001:2015, RoHS
칩 크기:
0.50x0.50x0.15mm
작동 온도:
-55°C ~ +125°C
습도 감지 수준:
MSL 1(J-STD-020)
RoHS 규제:
준수(EU 2015/863)
사용 가능한 대역폭:
DC~40GHz(일반)
맞춤화:
맞춤형 정전 용량 10pF~1000pF, 그라데이션 인터페이스 프로필 및 다이 형상
강조하다:

Gradient impedance matching MOS capacitor

,

220 pF 30V MOS capacitor

,

Ultra-wideband RF signal MOS capacitor

제품 설명
HGM221S30V220 Gradient Impedance Matching MOS Capacitor — 220 pF 30V Ultra-Wideband In short: The HGM221S30V220 is a 220 pF, 30 V single-layer MOS capacitor built on high-resistivity float-zone silicon with a thermally grown SiO2 dielectric. Its gradient impedance interface smooths the transition to the surrounding circuit so the capacitor keeps a consistent response over an ultra-wideband range, and it also holds sub-degree phase consistency between elements for array use.