Symmetrical Non-Polar 220 pF MOS Capacitor HACC221S50V350 90µm Ultra-Thin Chip for Embedded Substrates

HACC221S50V350 Symmetrical Non-Polar 220 pF MOS Capacitor, 90µm Ultra-Thin Chip for Embedded Substrates

In short: the Hoan HACC221S50V350 is a 220 pF ±10%, 50 V DC single layer MOS capacitor supplied as a wire bondable die measuring 0.50 × 0.50 × 0.09 mm. Its top and bottom electrode stacks are identical, so the part operates in either direction with no polarity marking. Q factor is above 2000 at 1 MHz and remains above 25 at 10 GHz, ESL is below 0.04 nH and the total profile is under 100 µm, which allows the die to be laminated inside laminate, polyimide and LTCC substrate build-ups. Capacitance value, voltage rating, die geometry and metallization are customizable.

What is this product?

The HACC221S50V350 belongs to the single layer MOS capacitor family, also described in the industry as an SLC (single layer capacitor), a wire bondable chip capacitor or a MOS RF chip capacitor. The device is a planar metal-oxide-semiconductor structure: a 300 nm thermally grown SiO2 dielectric sits between a sputtered thin-film top electrode and the metallized backside of a high-resistivity float-zone silicon substrate (>1000 Ohm·cm). Current flows vertically through a path of about 90 µm, with no internal electrode stack, no vias and no serpentine routing. This vertical, single-layer current path is the reason the part keeps a high Q and a low equivalent series inductance at microwave frequencies, where multi-layer ceramic chip capacitors reach self-resonance and turn inductive.

Customization matrix

Quality, testing and compliance

• 100% of die are production tested for capacitance, dissipation factor, leakage current and dielectric withstanding voltage.
• Wire bond pull strength typically above 6 gf for 25 µm gold wire, verified per MIL-STD-883 Method 2011.7.
• ESD classification Class 0 per JESD22-A114 (HBM); ESD-safe packaging is used throughout.
• Moisture sensitivity MSL 1 per J-STD-020, unlimited floor life when stored in a dry cabinet.
• RoHS compliant to EU 2011/65/EU and (EU) 2015/863, REACH conformant, halogen-free per IEC 61249-2-21 on request.
• S-parameter files, lot traceability reports and material declarations are supplied with each production lot.
• Quality management system certified to ISO 9001:2015.

Typical applications

• Embedded decoupling inside laminate and LTCC multi-chip modules and antenna-in-package substrates
• GaN and GaAs power amplifier DC blocking, bias tee and impedance matching networks
• Phased array T/R module inter-stage coupling and bypass
• Optical transceiver DC blocks for 100G, 400G and 800G module formats
• VCO tank circuits and precision resonator networks that need flat Q
• Automotive radar and industrial sensing front ends operating at 76-81 GHz
• Test and measurement fixtures where repeatable capacitance and low ESL are required