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Self-Aligned Sub-Micron Metal Electrode MOS Capacitor HACC106S30V330 330pF 30V Dispersion Free Chip

Self-Aligned Sub-Micron Metal Electrode MOS Capacitor HACC106S30V330 330pF 30V Dispersion Free Chip

Merknaam: Hoan
Modelnummer: HACC106S30V330
MOQ: 10 stuks
Betalingsvoorwaarden: L/C, D/A, D/P, T/T
Gedetailleerde informatie
Plaats van herkomst:
Shaanxi, China
Certificering:
ISO 9001:2015, RoHS
Topmetallisatie:
Au, 2,5 um min
Metallisatie aan de achterkant:
Au, 1,0 um min
Bedrijfstemperatuur:
-55°C tot +125°C
RoHS:
Voldoet aan EU 2015/863
ESD-klasse:
Klasse 0 (HBM)
Montagetype:
Met draad te verbinden/eutectische matrijsbevestiging
Markeren:

Self-Aligned MOS Capacitor 330pF 30V

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Sub-Micron Metal Electrode MOS Capacitor

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Dispersion Free Chip MOS Capacitor

Productomschrijving
Self-Aligned Sub-Micron Top Metal MOS Capacitor HACC106S30V330 330pF 30V Summary: The HACC106S30V330 is a 330 pF ±10%, 30 V DC single-layer MOS capacitor with a self-aligned sub-micron top metal electrode and a dispersion-free RF response. It is intended for compact millimetre-wave circuits that need a fine electrode geometry and a stable capacitance value. Overview The HACC106S30V330 is built on a float-zone silicon substrate (above 1000 Ω·cm) with a 300 nm thermal SiO2