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Self-Aligned Sub-Micron Metal Electrode MOS Capacitor HACC106S30V330 330pF 30V Dispersion Free Chip

Name: Self-Aligned Sub-Micron Metal Electrode MOS Capacitor HACC106S30V330 330pF 30V Dispersion Free Chip
Brand: HongAn Microwave Co., Ltd.
SKU: HACC106S30V330
Price: Bisa dinegosiasikan USD
Availability: InStock

Nama Merek:	Hoan
Nomor Model:	HACC106S30V330
MOQ:	10 buah
Ketentuan Pembayaran:	L/C,D/A,D/P,T/T

Informasi Rinci

Deskripsi Produk

Informasi Rinci

Tempat asal:

Shaanxi, Tiongkok

Sertifikasi:

ISO 9001:2015, RoHS

Metalisasi Teratas:

Au, 2,5 um mnt

Metalisasi Bagian Belakang:

Au, 1,0 um mnt

Suhu Operasional:

-55°C hingga +125°C

RoHS:

Sesuai dengan UE 2015/863

Kelas ESD:

Kelas 0 (HBM)

Tipe Pemasangan:

Kawat Berikat / Die Attach Eutectic

Menyoroti:

Self-Aligned MOS Capacitor 330pF 30V

Sub-Micron Metal Electrode MOS Capacitor

Dispersion Free Chip MOS Capacitor

Deskripsi Produk

Self-Aligned Sub-Micron Top Metal MOS Capacitor HACC106S30V330 330pF 30V Summary: The HACC106S30V330 is a 330 pF ±10%, 30 V DC single-layer MOS capacitor with a self-aligned sub-micron top metal electrode and a dispersion-free RF response. It is intended for compact millimetre-wave circuits that need a fine electrode geometry and a stable capacitance value. Overview The HACC106S30V330 is built on a float-zone silicon substrate (above 1000 Ω·cm) with a 300 nm thermal SiO2

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