Sub-Degree Phase Matching MOS Capacitor 100 pF 30V Chip for Beamforming Phased Array Modules

HPM101S30V100 Sub-Degree Phase Matching MOS Capacitor — 100 pF 30V for Beamforming

In short: The HPM101S30V100 is a 100 pF, 30 V single-layer MOS capacitor built on high-resistivity float-zone silicon with a thermally grown SiO2 dielectric. It is specified for sub-degree phase matching across an array, so that individual elements keep a consistent phase response in beamforming front-ends. A gradient impedance matching layer blends the transition between the electrode interface and the surrounding transmission line, which keeps that phase consistency over a wide band. Custom capacitance values and matching layers are available.

Key Facts

Gradient Impedance Matching Layer

An abrupt change in electrode or interface impedance reflects part of the signal and adds a frequency-dependent phase tilt. The HPM101S30V100 uses a gradient impedance matching layer, a stepped transition fabricated between the dielectric interface and the electrode, that spreads that change across several intermediate impedance levels instead of one step. The result is a smoother impedance path with lower reflection and a flatter phase response across the working band.

• Stepped impedance transition instead of a single abrupt step
• Lower reflection and flatter phase across the band
• Compatible with wire-bond and flip-chip (micro-bump) assembly

Applications

• Phased-array and beamforming front-end modules
• Digital beamforming receive and transmit channels
• 5G and 6G antenna array tiles
• Satellite communication phased arrays
• Wideband RF coupling and DC blocking between channels
• Test and measurement front-ends needing matched phase between ports