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Sub-Degree Phase Matching MOS Capacitor 100 pF 30V Chip for Beamforming Phased Array Modules

Name: Sub-Degree Phase Matching MOS Capacitor 100 pF 30V Chip for Beamforming Phased Array Modules
Brand: HongAn Microwave Co., Ltd.
SKU: HPM101S30V100
Price: Bisa dinegosiasikan USD
Availability: InStock

Nama Merek:	Hoan
Nomor Model:	HPM101S30V100
MOQ:	10 buah
Ketentuan Pembayaran:	L/C,D/A,D/P,T/T

Informasi Rinci

Deskripsi Produk

Informasi Rinci

Tempat asal:

Shaanxi, Tiongkok

Sertifikasi:

ISO 9001:2015, RoHS

Suhu Operasional:

-55°C hingga +125°C

Tingkat Sensitivitas Kelembaban:

MSL 1 (J-STD-020)

RoHS:

Sesuai (UE 2015/863)

Toleransi Pencocokan Fase:

Sub-derajat, unsur-ke-elemen

Bandwidth yang Dapat Digunakan:

DC hingga 18 GHz (khas)

Kustomisasi:

Kapasitansi khusus 10 pF-1000 pF, lapisan pencocokan gradien, dan geometri cetakan

Menyoroti:

30V MOS capacitor for beamforming

100 pF MOS capacitor chip

phase matching MOS capacitor

Deskripsi Produk

HPM101S30V100 Sub-Degree Phase Matching MOS Capacitor — 100 pF 30V for Beamforming In short: The HPM101S30V100 is a 100 pF, 30 V single-layer MOS capacitor built on high-resistivity float-zone silicon with a thermally grown SiO2 dielectric. It is specified for sub-degree phase matching across an array, so that individual elements keep a consistent phase response in beamforming front-ends. A gradient impedance matching layer blends the transition between the electrode

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Kondensator MOS