Zero-TCESR MOS Capacitor 100pF 50V Single Layer Chip For Ultra-Stable RF Gain

HACC101S50V200 Zero-TCESR MOS Capacitor — 100pF 50V Single Layer RF Chip

Product overview: The HACC101S50V200 is a single-layer metal-oxide-semiconductor (MOS) capacitor with a nominal capacitance of 100pF ±10% and a 50V DC working voltage. It is built on a float-zone silicon substrate with a 300nm thermal silicon dioxide (SiO₂) dielectric and a TiW-Au metallization stack. Its defining property is a Zero-TCESR design — the temperature coefficient of equivalent series resistance is close to zero, so ESR stays nearly constant from -55°C to +125°C. This suits RF signal chains that require stable gain over temperature.

What Is Zero-TCESR?

TCESR stands for Temperature Coefficient of Equivalent Series Resistance. A Zero-TCESR capacitor is one whose ESR changes very little with temperature. In an RF amplifier or matching network, ESR adds a small resistive loss in series with the signal path. If that loss grows as the board heats up, the gain of the stage falls. A capacitor with near-zero TCESR keeps that loss essentially constant, so gain stability is maintained across the operating temperature range without additional compensation networks.

Key Specifications (T = 25°C unless noted)

Typical Applications

• Low-noise amplifier (LNA) matching and gain stages
• RF and microwave amplifier bias decoupling
• Phased-array and beamformer RF channels
• Telecom radio front-ends
• Test and measurement instrumentation front-ends
• Filter, coupler, and matching networks