Oxygen-Free Ohmic Contact MOS Capacitor 470pF 100V Low ESR Single Layer Chip For Energy Harvesting Discharge

HACC471S100V701 MOS Capacitor — 470 pF 100 V with Oxygen-Free Ohmic Contact and Low-ESR Energy Discharge

The HACC471S100V701 is a 470 pF ±10% single-layer MOS capacitor rated at 100 V DC, fabricated on a conductive silicon substrate with an oxygen-free pure-gold ohmic backside contact. By eliminating interfacial oxide at the backside metal-to-silicon junction, the device achieves low interfacial and series resistance, which directly improves discharge efficiency in energy-harvesting storage and pulsed-power applications. A MOS capacitor is a single-layer capacitor formed by a metal-oxide-semiconductor structure (thermal silicon dioxide on a conductive silicon substrate), storing energy as ½CV². Low ESR and high Q ensure that stored charge is delivered to the load with minimal loss.

Oxygen-Free Ohmic Contacts for Low Interfacial Resistance

• Oxygen-free process: the backside ohmic contact is formed on low-resistivity silicon without exposure to oxygen, avoiding a high-resistance interfacial oxide layer between metal and substrate;
• Low interfacial resistance: the pure-Au ohmic contact minimizes contact resistance, keeping total ESR below 0.1 Ω at 1 GHz and series resistance low for discharge currents;
• Conductive silicon substrate: substrate resistivity is selectable per application (custom option), from high-resistivity for RF bias decoupling to low-resistivity for low-loss charge delivery;
• Assembly flexible: the Au backside supports AuSn eutectic, SAC solder and conductive epoxy attach; an Au-only finish is available for silver-filled epoxy.

Electrical Characteristics (typical, 25°C unless noted)

Typical Applications

Energy-harvesting storage and pulsed discharge in piezo, photovoltaic and thermoelectric systems; snubber and clamp networks of power converters; gate-drive decoupling in GaN and SiC modules; RF power amplifier bias networks; wireless sensor nodes and self-powered IoT modules requiring low-leakage, high-efficiency charge delivery.