HongAn Microwave Co., Ltd.
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| Brand Name: | Hoan |
| Model Number: | HACC221S50V500 |
| MOQ: | 10 Pieces |
| Payment Terms: | T/T,L/C,D/A,D/P |
The HACC221S50V500 is a single layer MOS capacitor fabricated on a high thermal conductivity silicon substrate with a thermally grown SiO2 dielectric. It is designed to conduct heat away from the active die instead of trapping it, which keeps the capacitor cooler and more stable during continuous RF power operation. It is a wire-bondable RF capacitor rated 220 pF ±10% at 50 V DC in a 0.50 × 0.50 × 0.15 mm chip.
| Nominal capacitance | 220 pF ±10% (±5% available) |
| Rated DC voltage | 50 V |
| Substrate thermal conductivity | >140 W/m·K |
| Thermal resistance (junction to carrier) | <15 K/W |
| Dielectric | Thermal SiO2, 300 nm |
| Substrate | High thermal conductivity silicon |
| Intrinsic ESL | <0.05 nH |
| Self-resonant frequency | >6 GHz (with 0.5 mm bond wire) |
| Q factor @ 1 MHz | >2000 |
| TCC | +35 ppm/°C |
| Operating temperature | -55 °C to +125 °C |
| Chip dimensions | 0.50 × 0.50 × 0.15 mm |
| Metallization | Top TiW-Au (2.5 µm min), backside TiW-Pt-Au (1.0 µm min) |
| Moisture sensitivity level | MSL 1 |
| RoHS | Compliant (EU 2015/863) |
| Parameter | This MOS capacitor | Ceramic carrier capacitor |
| Substrate thermal conductivity | >140 W/m·K | Typically 2-30 W/m·K |
| Junction-to-carrier thermal resistance | <15 K/W | Higher, depends on carrier |
| Heat path | Silicon substrate to backside metal | Limited by insulator |
| Capacitance vs. DC bias | Stable up to rated voltage | Can drop (Class II) |
