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MOS Capacitors 220 pF 100V High Breakdown Voltage Oxide Integrity Single Layer Chip with Custom Sizing

MOS Capacitors 220 pF 100V High Breakdown Voltage Oxide Integrity Single Layer Chip with Custom Sizing

Nama Merek: Hoan
Nomor Model: HACC221S100V240
MOQ: 100 buah
Ketentuan Pembayaran: T/T,L/C,D/P,D/A
Informasi Rinci
Tempat asal:
Shaanxi, Tiongkok
Sertifikasi:
ISO 9001:2015, RoHS
Metalisasi Bagian Belakang:
TiW-Pt-Au, 1,0 µm Au min
Tipe Pemasangan:
Pemasangan cetakan epoksi eutektik atau konduktif AuSn, ditambah ikatan kawat
Mati Geser:
>2,5 kgf setelah tekanan lingkungan
Suhu Operasional:
-55°C hingga +125°C
Tingkat Sensitivitas Kelembaban:
MSL 1 (J-STD-020)
Kualifikasi:
1000 jam HTRB dan HTOL, 500 siklus -65/+150°C, 500 jam 85/85 kelembapan bias
Opsi pengemasan:
Paket wafel, pak gel, pita dan gulungan 8 mm atau 12 mm, baki khusus
Menyoroti:

MOS capacitors 220 pF 100V

,

high breakdown voltage MOS capacitors

,

single layer chip capacitors custom sizing

Deskripsi Produk
HACC221S100V240 - 220 pF 100 V Single-Layer MOS Capacitor with High Breakdown Voltage and Custom Die Sizing Quick Answer The HACC221S100V240 is a wire-bondable single-layer MOS capacitor rated 220 pF ±5% at 100 V DC, built on a 300 nm thermally grown SiO₂ dielectric over float-zone silicon. The standard die is 0.60 × 0.60 × 0.15 mm with a dielectric withstanding voltage above 250 V DC and leakage under 5 nA at 25 °C. Die outline, thickness, capacitance, metallisation and