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MOS Capacitors 220 pF 100V High Breakdown Voltage Oxide Integrity Single Layer Chip with Custom Sizing

MOS Capacitors 220 pF 100V High Breakdown Voltage Oxide Integrity Single Layer Chip with Custom Sizing

Merknaam: Hoan
Modelnummer: HACC221S100V240
MOQ: 100 stuks
Betalingsvoorwaarden: T/T,L/C,D/P,D/A
Gedetailleerde informatie
Plaats van herkomst:
Shaanxi, China
Certificering:
ISO 9001:2015, RoHS
Metallisatie aan de achterkant:
TiW-Pt-Au, 1,0 µm Au min
Montagetype:
AuSn eutectische of geleidende epoxy-matrijsbevestiging, plus draadverbinding
Sterf Shear:
>2,5 kgf na omgevingsstress
Bedrijfstemperatuur:
-55°C tot +125°C
Vochtgevoeligheid:
MSL 1 (J-STD-020)
Kwalificatie:
1000 uur HTRB en HTOL, 500 cycli -65/+150°C, 500 uur 85/85 biased vochtigheid
Verpakkingsopties:
Wafelpakket, gelpak, 8 mm of 12 mm tape en haspel, bakjes op maat
Markeren:

MOS capacitors 220 pF 100V

,

high breakdown voltage MOS capacitors

,

single layer chip capacitors custom sizing

Productomschrijving
HACC221S100V240 - 220 pF 100 V Single-Layer MOS Capacitor with High Breakdown Voltage and Custom Die Sizing Quick Answer The HACC221S100V240 is a wire-bondable single-layer MOS capacitor rated 220 pF ±5% at 100 V DC, built on a 300 nm thermally grown SiO₂ dielectric over float-zone silicon. The standard die is 0.60 × 0.60 × 0.15 mm with a dielectric withstanding voltage above 250 V DC and leakage under 5 nA at 25 °C. Die outline, thickness, capacitance, metallisation and