MOS Capacitors 100 pF ±1% Precision Tolerance 50V Low Loss Single Layer Chip for High Frequency RF

HACC101S50V200 - 100 pF 50 V Single-Layer MOS Capacitor for High-Frequency, Low-Loss RF Design

Quick Answer

The HACC101S50V200 is a wire-bondable single-layer MOS capacitor: 100 pF ±1% at 50 V DC, built on a 300 nm thermally grown SiO₂ dielectric over float-zone silicon. The chip measures 0.50 × 0.50 × 0.15 mm and shows typically 0.05 nH intrinsic ESL, under 0.2 Ω ESR at 1 GHz, and a self-resonant frequency above 2 GHz when mounted with a 0.5 mm gold bond wire. Capacitance, footprint, thickness, metallisation and packaging can all be re-specified per order.

Key Specifications at a Glance

Precision Capacitance Control and Signal Integrity

• Tolerance. Standard tolerance is ±1% (F) at 1 MHz; ±0.5% is available on request for phase-critical or matched-pair assemblies.
• No DC-bias coefficient. SiO₂ is paraelectric, so the 100 pF value holds from 0 V to the full 50 V rating. Class II ceramic parts can lose a substantial share of their nominal value at rated voltage, which detunes a matching network exactly when the amplifier is biased up.
• No ageing. There are no ferroelectric domains to relax, so capacitance measured at goods-in equals capacitance after years of service within measurement uncertainty.
• Linear temperature coefficient. TCC is approximately +35 ppm/°C, close to linear from -55 °C to +125 °C, which allows first-order compensation to be designed rather than tuned at test.
• Low dielectric absorption. Below 0.1%, so sample-and-hold stages, integrators and AGC loops see no dielectric memory error.
• Verification. Capacitance is measured at 1 MHz, 1.0 Vrms, 25 °C on a calibrated LCR bridge; parts are binned to the ordered tolerance window before packing, and the measurement data can be supplied with the lot.

Custom Sizing and Packaging

The mask set, dicing pitch, wafer thickness and back-end packaging are configurable, so the capacitor can be fitted to the substrate instead of the layout being redesigned around a catalogue part.

Typical Applications

• RF and microwave coupling, DC blocking and bypass in hybrid microcircuits and multi-chip modules
• Power amplifier drain bias injection and gate bias decoupling
• Beamforming antenna modules, base station radio front ends and wireless backhaul units
• Filters, couplers, splitters and impedance matching networks
• Oscillator tanks and low-phase-noise resonator circuits
• Test and measurement front ends, calibration standards and probe cards
• Medical RF subsystems such as MRI coil electronics and RF generators
• Industrial RF heating, plasma excitation and instrumentation electronics