Вафельная упаковка, гель-пак, лента 8 мм или 12 мм и катушка, индивидуальные лотки.
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MOS Capacitors 100 pF ±1%
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50V Low Loss MOS Capacitors
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Single Layer Chip RF Capacitors
Характер продукции
HACC101S50V200 - 100 pF 50 V Single-Layer MOS Capacitor for High-Frequency, Low-Loss RF Design Quick Answer The HACC101S50V200 is a wire-bondable single-layer MOS capacitor: 100 pF ±1% at 50 V DC, built on a 300 nm thermally grown SiO₂ dielectric over float-zone silicon. The chip measures 0.50 × 0.50 × 0.15 mm and shows typically 0.05 nH intrinsic ESL, under 0.2 Ω ESR at 1 GHz, and a self-resonant frequency above 2 GHz when mounted with a 0.5 mm gold bond wire. Capacitance,