Extreme Voltage Dielectric Single Layer Ceramic Capacitor Wafer Level High Capacity Capacitor With Gel Pak Delivery

Custom MOS Capacitor Dielectric Thickness Extreme Voltage Wafer Level Gel Pak Delivery Doping Resistivity Control

HACC-CUSTOM-DV: Extreme-Voltage MOS Capacitor with Flexible Wafer-Level & Gel-Pak Delivery

Customized Dielectric Thickness for Extreme Voltages

The HACC-CUSTOM-DV extends the single-layer MOS capacitor voltage range through engineered dielectric thickness. The standard thermally grown SiO₂ dielectric (50–5000Å) supports rated voltages up to 500V. For higher voltage requirements, a stacked dielectric architecture — combining SiO₂ with stress-controlled SiN or high-k Al₂O₃ layers — achieves rated voltages up to 1000V while maintaining capacitance density. Dielectric withstanding voltage (DWV) is verified at 250–300% of rated voltage on every wafer, and time-dependent dielectric breakdown (TDDB) lifetime exceeds 10 years at maximum rated temperature. Thickness tolerance is ±2% wafer-level and ±1% within-die, verified by spectroscopic ellipsometry on every wafer.

The air-free single-layer MOS architecture eliminates the delamination and partial discharge risks associated with multi-layer ceramic capacitors (MLCCs) at high voltage gradients. Unlike MLCCs where internal electrode edges concentrate electric fields, the MOS capacitor's planar metal-insulator-semiconductor structure provides uniform field distribution across the entire capacitor area — a critical advantage for high-voltage reliability.

Flexible Wafer-Level, Waffle Pack, or Gel-Pak Delivery

The HACC-CUSTOM-DV accommodates any downstream assembly flow with three delivery options, individually selectable per production lot or mixed per wafer split:

• Wafer-Level: Full wafer delivery — probed, inked, and mapped with known-good-die binning. Options include sawn wafer on frame (for direct pick-and-place) or expanded film frame for die sorting.
• Gel-Pak: Sawn die placed on Gel-Pak trays with vacuum release for clean pick-and-place. Class 100 cleanroom packed, ideal for automated hybrid circuit assembly lines.
• Waffle Pack: Sawn die in anti-static waffle packs, vacuum-sealed with nitrogen purge. Includes known-good-die (KGD) map for die-level traceability.

Mixed packaging — for example, 50% of a wafer as Gel-Pak and 50% as waffle pack — is supported without requalification, providing maximum flexibility for prototype-to-production transitions or multi-site assembly flows.

Tailored Substrate Doping & Resistivity Control

As with all HACC-CUSTOM products, substrate doping is a design parameter: N+ or P+ profiles with resistivity from 0.001 to 1000 Ohm·cm, optimized for the target breakdown voltage (BVdss) and series resistance trade-off. The C-V characteristic can be shaped for flat capacitance or controlled-slope varactor behavior.

Key Specifications

Applications

• High-Voltage DC-DC Converter Filtering — 500V rated single-layer MOS capacitors replace MLCC banks
• Pulsed Power Energy Storage — stacked dielectric for 1000V operation, uniform field distribution
• High-Voltage Bias Networks — wafer-level delivery for automated hybrid circuit assembly
• ATE Pin Electronics Decoupling — Gel-Pak delivery for clean pick-and-place, Class 100 cleanroom

Contact us with your voltage requirement, dielectric specifications, and delivery format preference. Extreme-voltage MOS capacitor prototypes ship in 5–7 business days.