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100pF 50V Broadband Capacitor 0.4GHz - 40GHz Low ESR Capacitor Gold Wire Bonding

100pF 50V Broadband Capacitor 0.4GHz - 40GHz Low ESR Capacitor Gold Wire Bonding

Brand Name: Hoan
Model Number: HACC101S15V500
MOQ: 10
Payment Terms: L/C,D/A,D/P,T/T,Western Union
Detail Information
Place of Origin:
china
Product Category:
Single Layer Chip Capacitor (SLC)
Capacitance:
100 PF ± 10%
Frequency Range:
0.4 - 40.0 GHz
Adhesive Process:
Conductive Epoxy H20E (Cure: 120°C / 30 Min)
Substrate Type:
P-type Or N-type Silicon
Gate Material:
Polysilicon Or Metal
Temperature Range:
-55°C To 125°C
Highlight:

100pF Broadband Capacitor

,

50V Broadband Capacitor

,

40GHz Low ESR Capacitor

Product Description

HACC101S15V500 Single Layer Chip Capacitor 100pF 50V Bordered SLC (0.4-40GHz)


High-Frequency Technical Summary
   The HACC101S15V500 is an ultra-miniature, high-reliability Single Layer Chip Capacitor (SLC) engineered specifically for broadband DC blocking (coupling), RF bypassing, and impedance tuning in active microwave circuits. Measuring a mere 0.38 mm × 0.38 mm with a ultra-low profile height of 0.15 mm, this miniature chip delivers a stable capacitance of 100 pF ± 10% and is rated for a continuous working voltage of 50 V.

   Designed with a single-sided bordered structure, the HACC101S15V500 features a clean ceramic margin around the top electrode pad. This physical barrier prevents conductive epoxy run-up or solder bleed-out from short-circuiting the device during die attachment. Optimized for the 0.4 GHz to 40.0 GHz spectrum, it provides excellent insertion loss, low parasitic inductance, and stable S-parameters in demanding Tactical-grade thermal conditions from -55°C to +125°C.


Key Performance Advantages
   •Broadband Millimeter-Wave Coupling (0.4 - 40.0 GHz): Delivers exceptionally low insertion loss and high self-resonant frequency (SRF), serving as an ideal DC block.
   •Solder-Bridging Prevention (Bordered Design): The insulating margin around the gold electrode top protects the capacitor against accidental short circuits during conductive silver epoxy mounting.
   •Heavy Gold Metallization: Features a thick TiW-Au (4.0 µm Min) top electrode, offering an excellent surface for thermosonic gold wire bonding, ball bonding, or ribbon bonding.
   •Eutectic & Epoxy Ready Bottom: Built with a Ti-Pt-Au (0.5 µm Min) bottom electrode, providing a robust, non-migrating interface compatible with H20E conductive epoxy and Au-Sn eutectic soldering.


Overall Dimensions

100pF 50V Broadband Capacitor 0.4GHz - 40GHz Low ESR Capacitor Gold Wire Bonding


Comprehensive Parameter Datasheet

Engineering Field Specific Attribute Certified Value Measurement Unit / Conditions
Electrical Performance Nominal Capacitance 100 pF (+10% Tolerance @ 1kHz,IVrms, 25°C)
Rated Working Voltage(DC) 50 V (Maximum continuous)
Recommended Frequency Band 0.4-40.0 GHz (Broadband Coupling/DC Blocking)
Physical Geometry Outline Dimensions 0.38 x 0.38 x 0.15 mm (Length x Width x Height)
Physical Architecture Single-Sided Bordered Insulating ceramic margin
Metallization System Top Electrode Metallurgy TiW-Au Titanium-Tungsten Gold (≥4.0 m thickness)
Bottom Electrode Metallurgy Ti-Pt-Au Titanium-Platinum-Gold (≥0.5 umthickness)
Assembly Processes Mount Adhesion Conductive Epoxy /Solder Optimized for silver epoxy H20E /AuSn
Interconnect Connection Gold Wire/Ribbon Bond Thermosonic wire-bonding compatible
Reliability & Quality Operating Temperature -55 to +125 ℃ (Industrial & Tactical Grade)
Recommended Storage 20-25°C,40%-60%RH Cleanroom conditions
Guaranteed Shelf Life 1 Year (Under Storage Conditions)


S-Parameter Engineering & Sub-Millimeter Assembly Guide
   To maximize the broadband coupling response and prevent mechanical or electrical failures during hybrid assembly, microwave design engineers must follow these precise technical instructions:


Epotek H20E Silver Epoxy Bonding SOP
   The bottom electrode of the HACC101S15V500 is optimized for conductive silver epoxy mounting:

   •Adhesive selection: Use premium high-conductivity epoxy (such as Epoxy Technology H20E).
   •Dispensing: Apply a microscopic, controlled amount of epoxy onto the housing pad. Excess epoxy will bleed out.
   •Curing Profile: Bake/cure the assembly at 120°C for exactly 30 minutes. Ensure the temperature ramp rate is controlled to avoid thermal shock to the high-dielectric ceramic substrate.


Precision Gold Wire Bonding Boundaries
   •Wire Material: 0.7 mil to 1.0 mil (18 µm to 25 µm) high-purity gold (Au) wire is recommended.
   •Safe Bonding Clearance: The bonding wedge or ball capillary must hit the top gold pad at least 25 µm away from the electrode outer edge (border margin). Bonding too close to the ceramic border will cause mechanical shearing stresses, leading to gold electrode peeling, cracks in the dielectric, or capacitive failure.
   •Capillary Parameters: Minimize ultrasonic power and bonding force to prevent fracturing the thin 0.15mm ceramic wafer.


Comparative Technical Matrix (HACC101S15V500 vs. Standard SLC)

Engineering Comparison Factor HACC101S15V500 (Bordered SLC) Standard Non-Bordered SLC
Physical Top Structure Gold pad surrounded by an insulating ceramic border. Gold metallization completely covers100% of top surface.
Epoxy Bleed-out Protection Excellent. Insulating margin preventssilver epoxy bridging. High Risk. Silver epoxy can easily climbsidewall, shorting top/bottom.
Wire Bond Buffer Heavy TiW-Au (> 4.0 um) gold absorbshigh ultrasonic stress. Standard flash gold (< 1.0 um) isvulnerable to "bonding-through"
Solder Assembly Tolerance Excellent for AuSn eutectic soldering. Susceptible to solder bridging along theouter walls.
Automation Suitability Extremely High. Safely accommodates high-speed pick & place. Requires precise low-tolerance adhesive dispensing.


Test Data

100pF 50V Broadband Capacitor 0.4GHz - 40GHz Low ESR Capacitor Gold Wire Bonding


FAQ
Q1: What is the benefit of the TiW-Au top metallization with a minimum thickness of 4.0 µm?
   A:A thick gold top electrode is essential for reliable gold wire bonding. Standard chip capacitors with thin gold layers (<= 1.0 µm) can suffer from "bonding-through" or gold-epoxy intermetallic voiding, causing the bond wire to peel or lift under thermal stress. The 4.0 µm minimum thick gold on the HACC101S15V500 acts as a robust mechanical buffer, absorbing ultrasonic wedge/ball energy and ensuring an incredibly strong, durable wire weld.

Q2: Why is the HACC101S15V500 recommended for high-frequency coupling up to 40 GHz?
   A:Unlike multi-layer ceramic capacitors (MLCCs) which suffer from high parasitic inductance (ESL) and multiple self-resonances in the low gigahertz range, a Single Layer Capacitor (SLC) like the HACC101S15V500 has a straight-through coaxial-like current path. This yields exceptionally low equivalent series inductance and resistance (ESR). It behaves as a near-perfect transmission element, maintaining flat, low-insertion-loss coupling S-parameters all the way up to 40 GHz.

Q3: Can this capacitor be soldered with standard tin-lead or lead-free reflow?
   A:No, standard reflow is not recommended due to the tiny 0.38mm size of the chip. The preferred mounting method for the bottom electrode is conductive epoxy (like H20E) or Gold-Tin (80/20 AuSn) eutectic preform soldering. Standard tin-lead solder will leach the gold on the electrodes, weakening the mechanical and electrical connection.