| Brand Name: | Hoan |
| Model Number: | HACC151S100V200 |
| MOQ: | 10 Pieces |
| Payment Terms: | L/C,D/A,D/P,T/T,Western Union |
The HACC151S100V200 is a 150pF ±10% single-layer MOS capacitor rated at 100V DC, engineered for continuous operation at temperatures up to 200°C. Fabricated on float-zone silicon (>1000Ω·cm) with 300nm thermally-grown SiO2 dielectric, this device delivers industry-leading <10nA leakage current at 25°C along with >250V dielectric withstanding voltage. Chip dimensions are 0.50 x 0.50 x 0.15mm with TiW-Au top metallization (2.5µm minimum Au) and TiW-Pt-Au backside (1.0µm minimum Au, Pt diffusion barrier).
Leakage current in MOS capacitors is dominated by trap-assisted tunneling through the SiO2 dielectric and surface leakage along the chip edges. The HACC151S100V200 minimizes both mechanisms through optimized thermal oxidation and advanced passivation:
Dielectric breakdown is a leading field failure mechanism in high-voltage chip capacitors. The HACC151S100V200 eliminates this risk through conservative design margins:
Conventional MOS capacitors are rated to 125°C maximum. The HACC151S100V200 extends this by 75°C through materials engineering:
| Parameter | Value | Condition |
|---|---|---|
| Capacitance | 150pF ±10% | 1MHz, 1.0Vrms |
| Rated DC Voltage | 100V | Continuous |
| Dielectric Withstanding Voltage | >250V DC | 5 sec dwell, 100% test |
| Leakage Current @ 25°C | <10nA | 100V DC |
| Leakage Current @ 200°C | <500nA | 100V DC |
| TCC | +35ppm/°C | -55°C to +200°C |
| Q Factor @ 1MHz / @ 1GHz | >2000 / >200 | Typical |
| ESR @ 1GHz | <0.1 Ohm | De-embedded |
| Intrinsic Chip ESL | <0.05nH | De-embedded |
| Dielectric Absorption | <0.1% | 1kHz |
| ESD HBM | >2kV | JESD22-A114, Class 2 |
| Dielectric | Thermal SiO2, 300nm | - |
| Chip Dimensions | 0.50 x 0.50 x 0.15mm | ±25µm |
| Operating Temp | -55°C to +200°C | Full parametric |
| RoHS | Compliant | EU 2015/863 |
Die Attach: AuSn eutectic solder (300-320°C, N2/H2 forming gas) for >175°C operation. Conductive Ag epoxy (Epotek H20E, 120°C/30min) acceptable to 175°C. AuGe or AuSi pre-forms for highest-temperature applications.
Wire Bonding: 25µm Au thermosonic ball bonding (120-150°C stage, 15-35gf force, >6gf pull strength). Al wedge bonding not recommended for continuous 200°C operation.
Storage: Waffle pack or gel-pak, vacuum-sealed with nitrogen purge. MSL 1 unlimited floor life at 30°C/85%RH.
Contact us today with your voltage, capacitance, and environmental requirements. Standard 150pF 100V evaluation samples ship within 2-3 weeks. Custom values from 10pF to 1000pF, voltage ratings up to 200V, and extended temperature qualification to 225°C available with 4-6 week prototyping lead time.