330pF 16V Broadband Capacitor 0.1GHz - 30GHz Bordered Low ESR Capacitor Gold Bond Pad

HACC331S15V160 SSB SLC 330pF 16V (0.1-30GHz)

High-Frequency Technical Summary
    The HACC331S15V160 is an ultra-miniature, high-capacitance density Single-Sided Bordered Single Layer Ceramic Capacitor (SLC). This model is engineered specifically for ultra-broadband DC blocking, RF coupling, and microwave filtering in space-constrained microelectronics up to 30.0 GHz (covering UHF, L, S, C, X, Ku, and K microwave bands). Delivering a robust 330 pF ± 10% capacitance and rated for a continuous working voltage of 16 V, it is packaged into an incredibly compact 15 mil × 15 mil (0.38 mm × 0.38 mm) footprint with a ultra-low profile height of 0.15 mm.

    Designed with a single-sided bordered structure, the top gold electrode has a clean insulating ceramic margin. This border prevents conductive epoxy climb-up or solder bleed-out from short-circuiting the device. The top contact features a thick TiW-Au (4.0 µm Min) metallurgy, offering an outstanding buffer layer for heavy gold wire or ribbon wire-bonding, while the bottom electrode features a fully metallized, leach-resistant TiW-Pt-Au stack.

Overall Dimensions

Key Performance Advantages
    Ultra-Broadband Performance (0.1 - 30.0 GHz): Due to its extremely compact 15 mil package footprint, it exhibits exceptionally low equivalent series inductance (ESL). The large 330 pF capacitance extends its low-frequency bypass threshold downwards to 100 MHz, creating an ultra-broadband response.
    Thick Gold Top Bond Buffer: Sputtered with a premium TiW-Au (≥4.0 µm Gold) top metallization. The heavy gold layer absorbs high ultrasonic wire-bonding energy, completely preventing "bonding-through" or electrode lifting.
    Insulating Margin Prevention: The single-sided ceramic border acts as a physical dam to stop conductive silver epoxy from climbing onto the top electrode, ensuring reliable, short-free die attachment.
    Platinum Bottom Diffusion Barrier: Features a TiW-Pt-Au (0.5 µm Min Gold) bottom contact where the high-density Platinum (Pt) layer blocks gold-solder intermetallic formation, ensuring absolute adhesion and zero gold scavenging.

Comprehensive Parameter Datasheet

Thin-Film Metallization Stack Engineering

To ensure reliable wire bonding on the top and prevent solder scavenging on the bottom, the HACC331S15V160utilizes a high-reliability thin-film metallization system:

FAQ
Q1: What is the mechanical benefit of the 4.0 µm thick top gold electrode on the HACC331S15V160?
  A:In ultra-miniature 15 mil (0.38 mm) chip capacitors, wire bonding is highly delicate. During thermosonic wire bonding, ultrasonic energy and mechanical force are applied to the gold electrode pad. If the gold layer is thin (e.g., <= 1.0 µm), the capillary wedge can "punch through" the gold, damaging the high-K ceramic dielectric beneath or causing the gold layer to lift. The HACC331S15V160 features an ultra-thick 4.0 µm minimum sputtered top gold layer. This thick gold acts as a physical shock-absorber, cushioning the ultrasonic impact and ensuring an exceptionally high pull-strength wire bond.

Q2: How does the HACC331S15V160 achieve 330 pF in a tiny 15 mil footprint?
   A:To achieve such high capacitance (330 pF / 0.33 nF) in an ultra-compact 15 mil × 15 mil size, the capacitor is fabricated using highly advanced high-K (high-dielectric constant) thin-film micro-ceramic substrates with an ultra-thin dielectric thickness. This ultra-high capacitance density allows design engineers to replace bulkier 30 mil or 40 mil capacitors with this 15 mil chip, saving over 75% of valuable real estate on high-speed transceivers and microwave hybrid circuit substrates.

Q3: What is the reason for the lower 16V rated voltage?
  A:By using ultra-thin high-K dielectric material to maximize capacitance density (330 pF in a 15 mil package), the physical distance between the top and bottom electrodes is minimized. To maintain absolute safety and prevent dielectric breakdown, the continuous working voltage is rated at 16 V. This is highly optimized for ultra-compact, low-voltage GaAs/GaN MMIC chips, silicon RF ICs, and fiber-optic transceiver power grids which typically operate at 3.3V or 5.0V.