Broadband MOS Capacitor HACC105S30V150 150pF 30V Frequency Dispersion Damping for Ku Ka Band

Broadband MOS Capacitor HACC105S30V150 150pF 30V

Summary: The HACC105S30V150 is a 150 pF ±10%, 30 V DC single-layer MOS (metal-oxide-semiconductor) capacitor with damped frequency dispersion and a flat dielectric response from DC to the Ka band. It is intended for ultra-wideband RF signal chains that require a capacitance value that does not shift with frequency.

Overview

The HACC105S30V150 uses a single-layer MOS structure on a float-zone silicon substrate (above 1000 Ω·cm) with a 300 nm thermal SiO₂ dielectric. The chip measures 0.50 × 0.50 × 0.15 mm with 2.5 µm minimum gold top metallization and 1.0 µm minimum backside gold. It is wire bondable and compatible with eutectic die attach. The part is a die-level single-layer MOS capacitor (a wire bondable capacitor) for hybrid and chip-and-wire assemblies, also referred to as a single-layer capacitor (SLC) chip.

Key Features

• Frequency dispersion damping: capacitance variation within ±1% from 100 Hz to 40 GHz.
• Dispersion-free dielectric response from DC to the Ku/Ka band.
• 150 pF ±10% (5% available) at 30 V DC with no DC bias derating.
• Q > 2000 at 1 MHz; low dissipation factor across the band.
• Intrinsic ESL below 0.05 nH with self-resonance above 1.5 GHz.
• TiW-Au top and TiW-Pt-Au backside for wire bond and eutectic die attach.
• Custom capacitance values available on the same 0.50 mm platform.

Electrical Specifications (T = 25°C unless noted)

Typical Applications

• Ultra-wideband RF signal chains and broadband DC blocking
• Ku/Ka band microwave modules and up/down converters
• Broadband impedance matching and bypass networks
• 5G millimetre-wave radio front ends
• Wideband test and measurement instrumentation