Extreme High Temp 200C 100pF 30V MOS Capacitor Superior ESD Tolerance Single Layer RF Chip for Harsh Environments

HACC101S30V200 Extreme High-Temperature MOS Capacitor: 100pF 30V with 200°C Continuous Operation and Superior ESD Tolerance

The HACC101S30V200 is a 100pF ±10% single-layer MOS capacitor rated at 30V DC, engineered for continuous operation at temperatures up to 200°C—substantially exceeding the industry-standard 125°C limit for conventional MOS capacitors. Fabricated on float-zone silicon (>1000Ω·cm) with 300nm thermally-grown SiO₂ dielectric, this device incorporates a hardened metallization stack and specialized passivation to maintain parametric stability at extreme temperatures. Chip dimensions are 0.50mm × 0.50mm × 0.15mm with TiW-Au top metallization (2.5µm minimum Au) and TiW-Pt-Au backside (1.0µm minimum Au). With superior ESD tolerance exceeding 2kV HBM and 500V CDM, the HACC101S30V200 is designed for the most demanding operating environments in downhole drilling, aerospace, automotive under-hood, and industrial high-temperature electronics. Fully customizable: capacitance from 10pF to 220pF, voltage ratings from 6.3V to 50V, custom chip geometries, and alternative metallization stacks available with 4–6 week prototyping lead time.

1. Extreme High-Temperature Operation up to 200°C—Materials Science and Reliability Physics

Conventional silicon-based MOS capacitors are typically rated for 125°C maximum junction temperature, limited by three primary degradation mechanisms that accelerate at elevated temperatures. The HACC101S30V200 addresses each of these through materials engineering and design margin:

Leakage Current at Temperature

Silicon dioxide leakage current increases exponentially with temperature due to thermionic emission and Fowler-Nordheim tunneling. At 125°C, a standard MOS capacitor with 300nm SiO₂ dielectric exhibits leakage of approximately 100nA at rated voltage. At 200°C, this would typically rise to 1–5µA—an unacceptable level for precision circuits. The HACC101S30V200 maintains leakage below 500nA at 200°C through an optimized thermal oxidation process that minimizes interface trap density (Dit <5×10¹⁰ cm^-2eV^-1) and bulk oxide trapped charge. Lower trap density reduces the trap-assisted tunneling component of leakage current that dominates at elevated temperatures.

Metallization Stability at 200°C

The TiW-Au metallization system is specifically selected for high-temperature stability. The TiW (titanium-tungsten) diffusion barrier prevents silicon-gold interdiffusion that would otherwise form brittle Au-Si eutectic at temperatures above 180°C. The 100nm TiW layer maintains its amorphous structure and barrier integrity to at least 250°C, verified by Auger electron spectroscopy depth profiling after 1000-hour storage at 200°C. The 2.5µm minimum gold top electrode remains oxidation-free at all practical temperatures, maintaining solderable and wire-bondable surface quality indefinitely.

High-Temperature Operating Life (HTOL)

Production lots are qualified through 1000-hour HTOL at 200°C with 30V DC bias. Acceptance criteria: capacitance shift <2%, leakage current <2× initial, and wire bond pull strength >5gf post-stress. This is a 75°C acceleration beyond the standard 125°C HTOL requirement, providing demonstrated reliability margin for users operating at intermediate temperatures (150–175°C).

2. Superior ESD Tolerance—Design and Test Methodology

Electrostatic discharge (ESD) is a primary cause of latent damage in chip capacitors during assembly and handling. The human body model (HBM) represents a charged person discharging through the component, while the charged device model (CDM) represents the component itself discharging to ground. The HACC101S30V200 incorporates multiple design features to achieve exceptional ESD tolerance:

• Thick SiO₂ Dielectric—Intrinsic ESD Robustness: The 300nm thermal SiO₂ dielectric has a dielectric breakdown strength exceeding 10MV/cm, corresponding to a breakdown voltage >300V. This intrinsic dielectric strength provides a first line of protection against ESD transients. Unlike thin-film (50–100nm) capacitor dielectrics that may suffer latent damage from sub-breakdown ESD stress, the 300nm oxide provides substantial margin between the rated operating voltage (30V) and the dielectric breakdown threshold. ESD testing per JESD22-A114 confirms HBM withstand voltage >2kV, classifying the device as Class 2—a level typically associated with active semiconductor devices rather than passive chip capacitors.
• Uniform Field Distribution—No Edge Concentration: In MLCCs, internal electrode edges concentrate the electric field, creating localized regions where the dielectric stress during an ESD event can exceed the bulk breakdown strength. The MOS capacitor's planar metal-insulator-semiconductor structure provides uniform electric field distribution across the entire capacitor area. During an ESD event, the charge is distributed uniformly rather than concentrated at electrode edges, reducing the peak field by a factor of 5–10× compared to equivalent-thickness MLCC dielectrics.
• Charged Device Model (CDM) Protection: The CDM event occurs when a charged component rapidly discharges through a single pin to ground—typically during automated pick-and-place assembly. The HACC101S30V200 withstands CDM discharges >500V per JESD22-C101. The single-layer architecture with direct backside ground contact provides a defined discharge path with minimal parasitic impedance, preventing the destructive voltage overshoot that occurs when discharge current is forced through a high-inductance path.

3. High-Temperature Metallization and Assembly Compatibility

• Die Attach for 200°C Operation: Standard conductive silver epoxy (Epotek H20E) is rated for continuous operation to approximately 175°C. For applications operating above 175°C, AuSn eutectic solder (80Au/20Sn, melting point 280°C) provides reliable die attach with no degradation at 200°C. The Pt barrier in the backside TiW-Pt-Au metallization prevents Au-Sn intermetallic formation during reflow and subsequent high-temperature operation. For the highest-temperature applications, gold-germanium (AuGe, 356°C eutectic) or gold-silicon (AuSi, 363°C eutectic) pre-forms may be specified.
• Wire Bonding for 200°C Reliability: Au thermosonic ball bonding (25µm wire, 120–150°C stage) provides >6gf pull strength at 25°C. After 1000-hour storage at 200°C, pull strength remains >5gf with heel-break failure mode—indicating no significant Au-Au intermetallic degradation. Al wedge bonding is not recommended for continuous 200°C operation due to potential Au-Al intermetallic (purple plague) formation at the bond interface above 150°C.

Key Features

• Extreme High-Temperature Operation: Rated for continuous operation at 200°C—75°C beyond the industry-standard 125°C limit. 1000-hour HTOL qualified at 200°C with <2% capacitance shift and <2× initial leakage. TiW diffusion barrier prevents Au-Si interdiffusion to >250°C.
• Superior ESD Tolerance: >2kV HBM (Class 2 per JESD22-A114) and >500V CDM (per JESD22-C101). 300nm thermal SiO₂ provides >10MV/cm intrinsic dielectric strength with >300V breakdown. Uniform field distribution eliminates edge-concentration ESD failure modes of MLCCs.
• SiO₂ Dielectric Stability at Temperature: Leakage <500nA at 200°C and 30V DC. +35ppm/°C TCC maintained across -55°C to +200°C range. Zero ferroelectric aging—no capacitance drift over operating life.
• Harsh Environment Reliability: Qualified for downhole (high temperature, high vibration), aerospace (thermal vacuum cycling), and automotive under-hood (thermal shock, condensing humidity) applications.
• Customizable Platform: Capacitance from 10pF to 220pF. Voltage ratings from 6.3V to 50V. Custom chip geometries (rectangular up to 4:1 AR), irregular shapes, and metallization stacks available with rapid prototyping.

Electrical Specifications (T = 25°C unless noted)

Typical Applications

• Downhole drilling and logging tools (150–200°C ambient) requiring DC blocking and bypass capacitors that maintain parametric stability at formation temperatures
• Aerospace engine monitoring and control electronics operating in uncooled engine bay environments
• Automotive under-hood ECU and transmission control modules exposed to combined high temperature and conducted ESD transients
• Industrial furnace and process control sensor electronics operating continuously at 175–200°C
• Geothermal well monitoring equipment with multi-year deployment at sustained high temperature
• Ruggedized field-deployed electronics requiring both extended temperature range and superior ESD hardness for mission-critical equipment
• Scientific instrumentation for high-temperature physics experiments where component-level ESD failure is not an acceptable risk

Assembly Quick Reference

• Die Attach: AuSn eutectic solder (300–320°C, N₂/H₂ forming gas) recommended for 200°C operation. AuGe (356°C) or AuSi (363°C) for applications with higher subsequent reflow temperatures. Conductive Ag epoxy (Epotek H20E) acceptable to 175°C.
• Wire Bonding: 25µm Au thermosonic ball bonding (120–150°C stage, 15–35gf force, >6gf pull strength at 25°C). Al wedge bonding not recommended for continuous 200°C operation due to Au-Al intermetallic formation.
• ESD Handling: Device rated >2kV HBM provides substantial margin over standard assembly-line ESD risks. Conductive waffle pack packaging maintains ESD-safe storage. Industry-standard S20.20 ESD controls recommended.
• Storage: Waffle pack or gel-pak, vacuum-sealed nitrogen purge. MSL 1 unlimited floor life. Store at 20–25°C, 40–60% RH.

Ordering and Custom Configuration

Standard product ships as 0.50mm × 0.50mm square chips in conductive waffle packs. The following custom configurations are available on request with minimum order quantities typically starting at 10 pieces:

• Custom capacitance values within the 10pF–220pF range on the standard 0.50mm platform
• Rectangular chip geometries up to 4:1 aspect ratio, or irregular shapes for non-standard hybrid circuit footprints
• Non-standard voltage ratings from 6.3V to 50V DC
• Alternative backside metallization: Au-only, AuSn pre-deposition (3–5µm), AuGe, or AuSi for high-temperature eutectic attach
• Extended temperature qualification up to 225°C available on request with modified test plan
• Gel-pak or tape-and-reel packaging for automated assembly

Contact us with your target specifications for a feasibility assessment, lead time estimate, and quotation. Standard 100pF 200°C evaluation samples ship within 2–3 weeks. Custom configurations with 4–6 week prototyping lead time. HTOL qualification reports at 200°C and ESD characterization data per JESD22 available upon request.