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Ultra Low Noise MOS Capacitor
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HACC101S30V220 22pF MOS Capacitor
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30V MOS Capacitor for LNA
Productomschrijving
Ultra Low Noise MOS Capacitor HACC101S30V220 22pF 30V Summary: The HACC101S30V220 is a 22 pF ±10%, 30 V DC single-layer MOS (metal-oxide-semiconductor) capacitor built on a float-zone silicon substrate with a 300 nm thermal SiO2 dielectric. It is designed for ultra-low noise amplifier (LNA) input matching and DC blocking, where component noise and interface behaviour determine the receiver noise figure. Overview The HACC101S30V220 uses a single-layer MOS structure instead of