>6 gf para alambre de Au de 25 um, método MIL-STD-883 2011.7
Temperatura de funcionamiento:
-55 ºC a +125 ºC
Resaltar:
MOS Capacitors 470 pF 100V
,
ESD Hardened MOS Capacitors
,
Surge Tolerant SiC GaN Capacitors
Descripción de producto
Photo: HACC471S100V900 single layer MOS capacitor die, 0.90 mm square, passivated top pad and backside plane HACC471S100V900 470 pF MOS Capacitor, 100 V, ESD Hardened Die, Surge Tolerant, SiC GaN and CMOS Compatible Single layer MOS capacitor with passivated dielectric and selectable gold or gold-free metallisation for wide-bandgap and CMOS assembly flows 470 pF ±5% 100 V DC DWV >250 V Surge 8/20 µs, 5 A peak Au or Au-free backside 0.90 × 0.90 × 0.20 mm Key Facts at a Glance
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